Experimental Investigation of the Solid/Liquid Interface of Thin Films During Thermal Processing - Creativity Award

电子材料中最具挑战性的问题之一 处理是产生薄（1 μ m）单晶硅 在绝缘膜（SiO2）上的膜。所得产物是 绝缘体上硅系统（SOI），可用作建筑物 许多高级应用程序的块。通过完善的 诸如化学气相沉积、多晶沉积、化学气相沉积和化学气相沉积等技术， 可以容易地产生硅膜。的挑战是 以单晶的形式再结晶。 %%% 建议的研究计划：（1）验证是否存在困难 主要是由热传递驱动的; （2）尝试建立传热技术， 使薄硅膜以单晶的形式再结晶。 如果成功，这些技术将提高SOI的质量 用于微电子工业的薄膜。

One of the most challenging problems in electronic materials processing is the creation of a thin (1um) single crystal silicon film on an insulating film (SiO2). The resulting product is a silicon-on-insulator system (SOI) and can be used as the building block for many advanced applications. Through well established techniques such as chemical vapor deposition, a polycrystalline silicon film can be easily created. The challenge is to recrystallize it in the form of a single crystal. %%% The proposed research plans to: (1) verify if the difficulties of creating a single crystal are primarily driven by heat transfer; and (2) try to establish heat transfer techniques to successfully recrystallize thin silicon films in the form of single crystals. If successful, these techniques will improve the quality of SOI films used in the microelectronic industry.