Investigation of Microscale Radiation Phenomena Affecting Thermal Processing of Patterned Wafers

DMI-9612058 Miaoulis微尺度效应与微电子设备的热加工有关，这需要仔细控制晶片的温度分布。当辐射波长与所处理材料的层/膜厚度或特征尺寸相同数量级时，这些效应在材料加工中发挥重要作用。热问题导致缺陷在材料中的产生和传播，微电子特性的过度扩散，以及不均匀的薄膜沉积。随着这些设备变得越来越小，这些问题对电子材料制造的未来变得越来越关键。半导体行业，特别是制造设备行业，需要彻底了解这些现象。该研究项目将开发一套模拟和实验工具和技术来研究微尺度辐射现象，并开发一种新型的温度和应力测量系统。这项研究的结果将为亚微米图形晶片的制造提供有用的工具和模型。这项研究将基于微电子机械(MEMS)方法进行。该项目是塔夫茨大学材料热分析加工实验室与东北大学微细加工实验室的合作项目。

DMI-9612058 Miaoulis The microscale effects are pertinent to thermal processing of microelectronic devices which requires careful control of the temperature distribution of the wafer. These effects play a significant role in material processing when the wavelength of radiation is of the same order of magnitude as the layer/film thickness or feature sizes of the material processed. Thermal problems lead to defect generation and propagation in the material, excessive diffusion of microelectronics features, and non-uniform film deposition. As these devices become smaller and smaller, these issues become increasingly critical to the future of electronic materials manufacturing. The semiconductor industry, in particular, the manufacturing equipment sector, is in need of a thorough understanding of these phenomena. This research project will develop a set of simulation and experimental tools and techniques to examine the microscale radiative phenomena and to develop a novel temperature and stress measurement system. The outcomes of the study would yield useful tools and models for sub-micro patterned wafers manufacturing. The study will be conducted based on a microelectricalmechanical (MEMS) approach. This project is a collaboration between the Thermal Analysis of Materials Processing Laboratory of Tufts University and the Microfabrication Laboratory of the Northeastern University.