Investigation of Microscale Radiation Phenomena Affecting Thermal Processing of Patterned Wafers

邮编：9612058 微尺度效应与微电子器件的热处理有关，微电子器件的热处理需要仔细控制晶片的温度分布。 当辐射的波长与所处理的材料的层/膜厚度或特征尺寸具有相同的数量级时，这些效应在材料处理中起重要作用。 热问题导致材料中的缺陷产生和传播、微电子特征的过度扩散以及不均匀的膜沉积。 随着这些器件变得越来越小，这些问题对电子材料制造的未来变得越来越关键。 半导体行业，特别是制造设备行业，需要彻底了解这些现象。 本研究计画将发展一套模拟与实验工具与技术，以检视微尺度辐射现象，并发展一套新颖的温度与应力量测系统。 研究结果将为亚微米图案化晶片制造提供有用的工具和模型。 该研究将基于微机电（MEMS）方法进行。 该项目是塔夫茨大学材料加工热分析实验室和东北大学微加工实验室之间的合作。

DMI-9612058 Miaoulis The microscale effects are pertinent to thermal processing of microelectronic devices which requires careful control of the temperature distribution of the wafer. These effects play a significant role in material processing when the wavelength of radiation is of the same order of magnitude as the layer/film thickness or feature sizes of the material processed. Thermal problems lead to defect generation and propagation in the material, excessive diffusion of microelectronics features, and non-uniform film deposition. As these devices become smaller and smaller, these issues become increasingly critical to the future of electronic materials manufacturing. The semiconductor industry, in particular, the manufacturing equipment sector, is in need of a thorough understanding of these phenomena. This research project will develop a set of simulation and experimental tools and techniques to examine the microscale radiative phenomena and to develop a novel temperature and stress measurement system. The outcomes of the study would yield useful tools and models for sub-micro patterned wafers manufacturing. The study will be conducted based on a microelectricalmechanical (MEMS) approach. This project is a collaboration between the Thermal Analysis of Materials Processing Laboratory of Tufts University and the Microfabrication Laboratory of the Northeastern University.