Gallium Arsenide Sulfidation

这项工作的目标是了解和控制用于钝化GaAs表面的特定类型处理的化学性质，以提高电子器件的性能，均匀性和可靠性。目前正在研究砷化镓硫化的化学性质，其对特定工艺参数的依赖，以及对热、光和环境气体的长期响应。红外光谱用于实时监测发生在地表的特定化学和物理过程。使用XPS和光致发光辅助测量用于将薄膜结构和化学与电子特性联系起来。

The goal of this work is to understand and control the chemical nature of particular types of processing used to passivate GaAs surfaces for improved electronic device performance, uniformity and reliability. The chemical nature of sulfidation of GaAs, its dependence on particular processing parameters, and long term response to heat, light, and ambient gases are being studied. Infrared spectroscopy is used for real time in situ monitoring of specific chemical and physical processes which occur at the surface. Auxillary measurements using XPS and photoluminescence are used to correlate film structure and chemistry with electronic properties.