Development of GaInP/GaAs and A1GaInP/GaAs HEMT, Quantum- Well and MIS/MISFET Structures for High-Frequency and Optoelectronic Device Applications (Research Planning Grant)

对毫米波领域日益增长的兴趣刺激了接收机技术的发展，用于广泛的应用，包括射电天文学、大气辐射测量、等离子体诊断、毫米波成像、无损检测、雷达和高密度。高指向性通信和数据传输。迄今为止，大多数符合飞行标准的III-V型化合物半导体高速电子产品都使用了GaAs或AlGaAs/GaAs基器件。近年来，基于AlGaAs/InGaAs/GaAs、AllnAs/InGaAs、和InGaAs/InP在频率上表现出优异的器件性能，远远超过AlGaAs/GaAs系统。在这项研究计划拨款中，将制造和测试二端和三端GaInP/GaAs和AlGaInP/GaAs器件。该材料将在犹他大学通过有机金属气相外延生长，并将在本研究下进行完整的器件表征（直流至60 GHz）。在这项工作中实现的器件概念将包括离散HEMT、绝缘门场效应晶体管、量子阱器件以及变容管倍频器和变换器原型。规划研究完成后，还将对GaInP/GaAs和AlGaInP/GaAs异质系统微波和毫米波器件的光控制进行研究。高频电子和光电子电路应用的器件概念将用于设计和制造单片毫米波集成电路。此外，还将制作GaInP/GaAs和AlGaInP/GaAs高频器件二维阵列，在94至147 GHz频率范围内产生高输出功率（即瓦特级）。

Increased interest in the millimeter region has stimulated the development of receiver technology for a wide range of applications including radio astronomy, atmospheric radiometry, plasma diagnostics, millimeter wave imaging, nondestructive testing, radar, and high- density, high-directivity communications and data transmission. To date, most of the flight- qualified production III-V compound semiconductor high-speed electronics have used GaAs- or AlGaAs/GaAs-based devices. Recently high electron mobility (HEMT) and heterojunction bipolar transistor (HBT) systems based on AlGaAs/InGaAs/GaAs, AllnAs/InGaAs, and InGaAs/InP have demonstrated excellent device performance at frequencies far exceeding those possible with the AlGaAs/GaAs system. In this Research Planning Grant award, both two- and three-terminal GaInP/GaAs and AlGaInP/GaAs devices will be fabricated and tested. The material will be grown by organo- metallic vapor phase epitaxy at the University of Utah and complete device characterization (dc to 60 GHz) will be carried out under this research. Device concepts to be implemented in this work will include discrete HEMT, insulated gate field effect transistors, and quantum well devices along with prototype varactor frequency multipliers and converters. After the completion of the planning research, optical control of microwave and millimeter wave devices of GaInP/GaAs and AlGaInP/GaAs heterosystems will also be investigated. The device concepts for high- frequency electronic and optoelectronic circuit applications will then be used for designing and fabricating a monolithic millimeter wave integrated circuit. In addition, two-dimensional array of high frequency devices of GaInP/GaAs and AlGaInP/GaAs will be fabricated to produce high output power (i.e., Watt level) at frequencies in the range of 94 to 147 GHz.