Characterization of Novel Rare Earth Phosphide Compounds Lattice-matched to InP.

9312173 Hwu-Sadwick提出了一些最有希望的热力学稳定的、化学惰性的、元素金属-磷化物二元化合物异质外延候选材料来替代磷化铟。我们将进行室温和高温退火后的电学和光学表征，并进行理论研究，以加深对这些新的InP二元和三元化合物异质外延势垒的材料和器件特性的理解。将进行光致发光(PL)、光反射(PR)、拉曼、吸收和透射率等光学测量，以及电容与电压(CV)、电流与电压(I-V)、光响应、肖特基接触和传输线的电阻率测量以及欧姆接触的电阻率测量等电学测量，以确定这些新材料系统的材料和器件特性。还将在半绝缘的InP衬底上生长RE-P异质外延层，以便进行霍尔效应、磁阻和电阻率随温度的测量，以努力确定RE-P外延层是金属、半导体还是绝缘体。将开发模拟模型来执行这些新材料系统的能带结构和带隙计算。此外，还将对RExIn1-XP等新型三元化合物进行理论研究。***

9312173 Hwu-Sadwick An investigation of some of the most promising thermodynamically stable, chemically inert, elemental metal-phosphide binary compound heteroepitaxial candidates to indium phosphide (InP) is proposed. Electrical and Optical characterizations at both room temperature and after elevated temperature annealing will be carried out and theoretical studies will be conducted to develop the understanding of the material and device properties of these new heteroepitaxial barriers to InP binary and ternary compound material. Optical measurements such as photoluminenscence (PL), photoreflectance (PR), Raman, absorption and transmission and electrical measurements such as capacitance versus voltage (CV), current versus voltage (I-V), photoresponse, and resistivity measurements for the Schottky contacts and transmission line and resistivity measurements for the Ohmic contacts will be performed to determine the material and device characteristics of these new material systems. The RE-P heteroepitaxial layers will also be grown on semi-insulating InP substrates so that Hall effect, magnetoresistance, and resistivity versus temperature measurements can be performed in an effort to ascertain whether the RE-P epilayers are metals, semimetals, semiconductors, or insulators. Simulation models will be developed to perform energy band structure and bandgap calculations of these new material systems. In addition, novel ternary compounds such as RExIn1-xP will be theoretically studied. ***