Atomistic Processes

将进行基础研究，以改善对半导体及其表面的原子过程和结构的理解。利用位错扭结运动的实时原子分辨透射电子显微镜录像，研究半导体中位错运动的原子学。这项研究旨在了解不同运动部分位错上的扭结运动之间的相关性、扭结运动障碍的性质以及它们的密度和等待时间。此外，还将用超高真空电子衍射法研究硅衬底上生长SiGe合金的早期阶段。本研究旨在确定低覆盖率Ge在Si(111)表面结构上的原子坐标，并将结果与扫描隧道显微镜(STM)的工作进行比较。这项研究有望对原子相互作用及其与缺陷、缺陷运动和外延晶体生长早期阶段的关系提供更深层次的基础理解。从应用的角度来看，了解这些特性有助于半导体器件的设计和制造。研究结果对大规模、高速集成电路技术具有普遍意义。

Fundamental research directed toward improved understanding of atomistic processes and structure in semiconductors and their surfaces will be conducted. The atomistics of dislocation motion in semiconductors will be studied using real-time atomic resolution transmission electron microscope video recordings of dislocation kink motion. The research aims to understand the correlation between kink motions on different moving partial dislocations, the nature of obstacles to kink motion, and their density and waiting times. Also, the early stages of the growth of SiGe alloys on silicon will be studied by ultrahigh vacuum transmission electron diffraction. The research seeks to determine the atomic coordinates for low coverage Ge on Si(111) surface structures, and in comparing the results with scanning tunneling microscope(STM) work. %%% This research is expected to provide deeper fundamental understanding of atomic interactions and their relationship to defects, defect motion, and early stages of epitaxial crystal growth. From an application point of view, understanding these properties is helpful to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.