PYI: Heterostructure Device Research

未来III-V族异质结器件的研究 先进的通信系统。 一 将采取双管齐下的战略。 进化 具有足够完善的操作系统的设备 InP的原则是有针对性的。 相当大 技术工作需要在突出的 InP基半导体的电子性质， 正确利用。 我们的战略依赖于带隙 工程，小心引入应变，以及 单层外延生长 革命性的设备 也将进行研究， 一种全新的“智能”电子设备 具有增强的功能。 为此，我们 研究降维中的量子效应 异质结构 我们的指导原则是强者为尊 导波光学中的光子与 一维量子化电子 结构. 我们的技术力量将集中在 围绕着弹道量子线的制造， 耦合量子线，这是一个测试平台， 研究新的电子相互作用， 几何学

III-V heterostructure device research for future advanced communications systems is proposed. A two-prong strategy will be pursued. Evolutionary devices with sufficiently well established operating principles on InP are targeted. Considerable technological work is needed before the outstanding electronic properties of InP-based semiconductors is correctly exploited. Our strategy relies on bandgap engineering, careful introduction of strain, and monolayer epitaxial growth. Revolutionary devices will also be investigated with the goal of synthesizing an entirely new class of "smarter" electronic devices with enhanced functionality. To this aim, we are studying quantum effects in reduced dimensionality heterostructures. Our guiding principle is the strong analogy between photons in guided-wave optics and electrons in one-dimensional (1D) quantized structures. Our technological effort will be centered around the fabrication of ballistic quantum wires and coupled quantum wires which are a test-bed for studying new electron interactions in constricted geometries.