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Presidential Young Investigator Award: The Surface Chemistry of Gas-Solid Materials Processing

Presidential Young Investigator Award: The Surface Chemistry of Gas-Solid Materials Processing
总统青年研究员奖:气固材料加工的表面化学
批准号:
9157892
负责人:
James Engstrom
金额:
$31.25万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-07-01 至 1997-06-30

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中文摘要
翻译
这项工作的目标是对涉及气体-表面相互作用的材料加工操作有一个基本的了解,包括化学气相沉积、分子束外延和等离子体刻蚀。重点介绍了气相自由基或原子与固体表面的反应,以及重合的“辐射”(离子、光子、电子)与底物和吸附物种之间的相互作用。自由基表面化学对等离子体处理非常重要,在CVD等纯热过程中也有作用。辐射诱导化学也涉及到等离子体加工,并在“选定区域”加工中有重要的应用。
英文摘要
The objective of this work is a fundamental understanding of materials processing operations that involve gas-surface interactions, including chemical vapor depsostion, molecualr beam epitaxy, and plasma etching. The emphasis is on details of the reactions of gas-phase radicals or atoms with solid surfaces, and on the interactions between coincident "radiation" (ions, photons, electrons) on the one hand and the substrate and adsorbed species on the other. Radical-surface chemistry is very important to plasma processing, and also has a role in purely thermal processes such as CVD. Radiation- induced chemistry is also involved in plasma processing, and has important applications in "selected area" processing.
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NIRT: Nanoscale Engineering of Inorganic-Organic Interfaces: Applications to Molecular Scale Electronics
  • 批准号:
    0210693
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2002
  • 负责人:
    James Engstrom
  • 依托单位:
Engineering Research Equipment: Analytical Probes for In Situ Characterization of an Ultrahigh Vacuum Thin Film Desposition Reactor
  • 批准号:
    9610123
  • 项目类别:
    Standard Grant
  • 资助金额:
    $2.8万
  • 财政年份:
    1997
  • 负责人:
    James Engstrom
  • 依托单位:
GOALI: Industry/University Cooperative Research Project: Development of a Novel Thin Film Deposition Process: A Combined Experimental and Computer Simulation Study
  • 批准号:
    9500817
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $29.84万
  • 财政年份:
    1995
  • 负责人:
    James Engstrom
  • 依托单位:
Surface Chemical Dynamics and Kinetics at the Gas-Solid Epitazial Growth Interface
  • 批准号:
    9010561
  • 项目类别:
    Standard Grant
  • 资助金额:
    $7.0万
  • 财政年份:
    1990
  • 负责人:
    James Engstrom
  • 依托单位:
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