Electrical and Optical Characterization of Epitaxial Gallium-Arsenide and Related Materials Containing Controlled Concentrations of Oxygen and Boron

与氧有关的杂质在合成中作用的基础研究 外延InP和相关系统将进行。 主要目标 包括理解深能级杂质的机制 掺入，缺陷中心和深能级的微观性质 产生的氧有关的杂质，和氧有关的影响， 杂质对电子性能的影响。 研究强调系统性 含有受控深能级的外延样品的研究 浓度. 目标深层浓度范围超过几个 数量级将被并入外延InP和相关的 系统通过MOVPE生长过程。 表征研究将 强调高压电气和光学测量， 阐明氧相关态与能带结构的关系， 与深能级有关的晶格弛豫效应的大小 介绍，和深层次的电荷状态的稳定性。 %%% 这项研究的重点是获得一个基本的了解， InP基材料的电学和光学性质， 控制选定杂质的量。 化学特性和 这些杂质的浓度赋予InP独特的特性 材料，并将用于生产具有新的 电学和光学性质。 基于计算机的技术， 激光、成像和通信系统将从中受益 research.

Fundamental research on the effects of oxygen-related impurities in epitaxial InP and related systems will be conducted. Primary objectives include understanding the mechanism of deep level impurity incorporation, the microscopic nature of defect centers and deep levels produced by oxygen-related impurities, and the effects of oxygen-related impurities on electronic properties. The research emphasizes systematic studies of epitaxial samples containing a controlled deep level concentration. Targeted deep level concentrations ranging over several orders of magnitude will be incorporated into epitaxial InP and related systems via an MOVPE growth process. Characterization studies will emphasize high pressure electrical and optical measurements designed to elucidate the relationship of oxygen-related states to band structure, the magnitude of lattice relaxation effects associated with deep level introduction, and the stability of deep level charge states. %%% This research focuses on obtaining a fundamental understanding of the electrical and optical properties of InP based materials containing controlled amounts of selected impurities. The chemical identity and concentration of these impurities impart unique characteristics to InP based materials and will be used to produce materials possessing novel electrical and optical properties. Technologies based on computers, lasers, imaging, and communications systems will benefit from this research.