Quantum Structures for Light-emitting Silicon-Germanium Optoelectronic Devices

硅锗异质结构领域的一个基本问题是发光器件实现强电泵浦发光的可能性。基于有希望的初步结果，我们建议使用快速热化学气相沉积（RTCVD）生长技术来开发新的量子材料结构，以提高硅-锗体系的发光强度。普林斯顿大学的RTCVD技术已经展示了应变Si1-xGex量子阱和超晶格中第一个分辨率很高的带状发光，也是Si1-xGex系统中第一个1.3 um室温电致发光（LED）。我们建议通过研究超薄量子阱（= 1 nm）和化学气相沉积（CVD）生长的单层超晶格中的载流子的性质来提高这些初始结果的量子效率。这项工作将侧重于这种结构的生长和光电特性，这些结构以前没有被CVD生长过。这种生长需要理解IV柱CVD中异质外延的初始阶段，这将通过在普林斯顿的快速热CVD反应器中使用俄歇电子谱进行研究。最终目标将是一个自我限制的原子层外延工艺。

A fundamental question in the silicon- germanium heterostructure field is the possibility of strong electrically-pumped light emission for light-emitting devices. Based on promising initial results, we propose to use the Rapid Thermal Chemical Vapor Deposition (RTCVD) growth technique to develop novel quantum material structures to increase the light-emission intensities in the silicon- germanium system. This RTCVD technique at Princeton has already demonstrated the first well-resolved bandedge light-emission from strained Si1-xGex quantum wells and superlattices, and also the first 1.3-um room- temperature electro-luminescence (LED's) in the Si1-xGex system. It is proposed to increase the quantum efficiencies of these initial results by examining the properties of carriers in ultra- thin quantum wells ( = 1 nm) and monolayer-scale superlattices grown by chemical vapor deposition (CVD). This work will focus on the growth and opto-electronic characterization of such structures, which have not previously been grown by CVD. Such growth will require an understanding of the initial stages of heteroepitaxy in column IV CVD, which will be studied through the use of Auger electron spectroscopy in the rapid thermal CVD reactor at Princeton. The ultimate goal will be a self-limiting atomic layer epitaxy process.