Electronic Properties of Amorphous Semiconductors

研究非晶半导体中的基本缺陷是为了 在四大活动领域开展工作。 拟议工作 将研究D缺陷的性质， 使用自旋瞬态测量的松弛和非松弛状态， 在本征a-Si：H中使用电容瞬态方法。 掺杂 将对多层膜进行研究，以研究污染效应， 电子俘获到下间隙材料的薄区域中。 的 c-Si/a-Si：H界面的性质将被检查以理解 衬底对a-Si：H电子结构的影响 近界面区。 界面缺陷分布 将与ESR和光产生研究相关。 的 缺陷密度将在半导体转变中确定 金属硫属化物，以帮助开发具有优化的 电子特性

The study of fundamental defects in amorphous semiconductors is to be undertaken in four general areas of activity. The proposed work will investigate the nature of the D defect in its different relaxed and unrelaxed states using spin transient measurements and in intrinsic a-Si:H using capacitive transient methods. Doping multilayers will be investigated to study contamination effects and electron trapping into thin regions of the lower gap material. The nature of the c-Si/a-Si:H interface will be examined to understand the effects of the substrate on the a-Si:H electronic structure in the near interface region. The distribution of interface defects will be correlated with ESR and opitcal generation studies. The defect density will be determined in semiconducting transition metal chalcogenides to help develop samples with optimized electronic properties.