Monitoring and Enhancing Molecular Beam Epitaxy Using Low Energy Ion Scattering

开展研究，以扩大对地面进程的控制， 将进行分子束外延。 方法是使用 离子从生长表面散射，允许两种离子 散射光谱（ISS），在低离子通量，并控制 在较高通量下的生长模式改变。 ISS提供 表面第一原子层成分分析 提供合金成分控制和层的控制 单层范围内的厚度。 掠射角离子，获得 使用国际空间站离子源，提供了一种独特的方法， 由于阴影效应可用于将离子能量聚焦在 特定的表面部位。 例如，冲击角，其中 能量沉积在表面缺陷处，而不是完美区域， 可用于增强吸附原子的迁移率，使表面平整，或 改善表面台阶的有序性。 %%% 虽然分子束外延（MBE）已经导致了巨大的进步， 在固态物理学和半导体器件中， 用于设备生产。 这项研究旨在更好地了解 分子束外延过程中发生在原子水平的基本过程， 为了克服在更大规模的核反应堆上使用分子束外延的主要障碍之一， 规模

Research to extend the control of surface processes during molecular beam epitaxy will be conducted. The approach is to use ion scattering from the growth surface, allowing both ion scattering spectroscopy (ISS), at low ion fluxes, and controlled growth mode modification at higher fluxes. ISS provides composition analysis of the first atomic layer of the surface providing alloy composition control and control of layer thicknesses in the monolayer range. Glancing angle ions, obtained using the ISS ion source, provide a unique method for tailoring surfaces since shadowing effects can be used to focus ion energy at specific surface sites. For example, impingement angles where energy is deposited at surface defects, but not at perfect regions, can be used to enhance adatom mobilities, flatten surfaces, or improve the ordering of surface steps. %%% While molecular beam epitaxy (MBE) has led to tremendous advances in solid state physics and semiconductor devices, it is not optimum for device production. This research seeks to better understand fundamental processes occuring during MBE at the atomic level, and to overcome one of the major hurdles to the use of MBE on a larger scale.