Kinetic Energy Enhanced Neutral Beam Epitaxy

该奖项由化学部先进材料和加工计划颁发，旨在通过动能选择的中性光束提高外延生长的金属、硅和锗薄膜的质量。这些光束将由脉冲激光蒸发固体衬底靶产生，中间沉积在透明窗口上，然后激光喷射形成高动能光束。束的速度将由高速机械斩波器选择，以在1-10 eV的范围内获得明确的中性动能。利用低能离子散射谱、俄歇能谱和低能电子衍射仪对束的外延生长进行了原位探测。研究将讨论动能对薄膜质量和生长模式的影响，包括金属在硅单晶上的低温沉积、硅化物的形成、硅的同质外延和硅锗的异质外延。对耐火衬底上金属层层生长机理的基础知识将推动VSLI微电子的半导体接触技术的发展。

This award, made in the Advanced Materials and Processing Program of the Chemistry Division, is concerned with improving the quality of films of epitaxially-grown metals, silicon and germanium by means of kinetic energy-selected neutral beams. The beams will be produced by pulsed laser vaporization of solid substrate targets with intermediate deposition on a transparent window before laser ejection to form the high kinetic energy beam. Beams will be velocity selected by a high speed mechanical chopper to obtain well-defined neutral kinetic energies in the range of 1-10 eV. Epitaxial growth of the beams will be probed in situ by low energy ion scattering spectroscopy, Auger spectroscopy and low energy electron diffraction. Studies will address the effects of kinetic energy on film quality and growth modes for the low substrate temperature deposition of metals on silicon single crystals, the formation of silicides, the homoepitaxy of silicon, and the heteroepitaxy of silicon-germanium. %%% Fundamental knowledge of the the mechanism of layer-by layer growth of metals on refractory substrates will advance the technology of semiconductor contacts for VSLI microelectronics.