Global Modeling and Diagnostics of Plasma Processing Reactors

为了提高对等离子体刻蚀和薄膜等离子体沉积等等离子体过程的理解，并帮助开发新的等离子体反应堆，为Demetre Economou/University of Houston/CTS-9216023提出了一个联合建模和实验方案。这里提出的工作是对以前工作的延伸和继续。将对Ar/Cl2等离子体系统进行研究。我们将考虑两种辉光放电模型，即。整体辉光放电模型和更简单的两区模型。求含时玻尔兹曼方程的解，以获得有关电子传输和反应系数的信息；这些结果将与中性传输和中性反应的结果相结合。模型预测将与实验进行比较。将进行空间分辨光学发射光谱、激光干涉测量和朗缪尔探针测量，以及质谱学测量和离子通量和能量分析。该模型将应用于三种不同的反应堆结构。平行板反应堆、无电极等离子体和ECR反应堆的源区。硅和砷化镓将被用作刻蚀研究的衬底。

Abstract for Demetre Economou / University of Houston / CTS-9216023 A combined modeling and experimental program is proposed to improve the understanding of plasma processes such as plasma etching and plasma deposition of thin films, and to aid in the development of new plasma reactors. The work proposed here represents an extension and continuation of previous work. The argon/chlorine plasma system will be investigated. Two kinds of glow discharge models will be considered viz. an overall glow discharge model and a simpler two-region model. Solutions of the time-dependent Boltzmann equation will be sought to obtain information on electron transport and reaction coefficients; these results will be integrated with results for neutral transport and neutral reaction. Model predictions will be compared to experiment. Spatially resolved optical emission spectroscopy, laser interferometry, and Langmuir probe measurements together with mass spectrometric measurements and ion flux and energy analysis will be carried out. The model will be applied to three kinds of reactor configurations viz. parallel plate reactors, electrodeless plasmas and the source region of ECR reactors. Silicon and GaAs will be used as substrates for etching studies.