Electromigration of Metals on the Silicon Surface

小行星9223764 硅上金属的表面电迁移（SE）的基本方面将使用热扫描隧道显微镜（STM）进行研究。 所使用的仪器和实验方法将允许原子水平的分辨率和识别的基本力量参与电迁移过程。 本研究的另一部分是了解表面电迁移对覆盖层生长的影响，并探索利用电迁移控制晶体生长的可能性。 这项研究有望提供有关广泛用于超大规模集成电路技术的半导体材料的基本新信息。 国家的最先进的表面仪器和方法，预计揭示原子尺度的表面电迁移，被认为是与集成电路金属互连线的故障的现象的特征。 所研究的材料在电子和光电子器件中具有广泛的适用性，对电迁移的更深入了解有望改善由这些材料制成的器件和电路的性能，并可能导致用于计算，信息处理和电信的集成电路性能的改善。 ***

9223764 Nogami Fundamental aspects of surface electromigration(SE) of metals on silicon will be studied using hot scanning tunneling microscopy(STM). The instrumentation used and experimental approach followed will allow atomic level resolution and identification of fundamental forces involved in the electromigration process. Another part of the research is to understand the effects of surface electromigration on overlayer growth, and to explore the possibility of using electromigration to control crystal growth. %%% This research is expected to provide fundamental new information about semiconductor materials which are widely used for VLSI technology. State-of-the-art surface instrumentation and methods are expected to reveal atomic scale features of surface electromigration, a phenomena thought to be related to failure of integrated circuit metal interconnect lines. The materials under study have wide applicability in electronic and optoelectronic devices, and a greater understanding of electromigration is expected to improve the performance of devices and circuits made from these materials, and may lead to improvements in the performance of integrated circuits used in computing, information processing, and telecommunications. ***