RIA: Design and Simulation of Ultrafast Optoelectronic Devices and Circuits

* * * * * * * * * * * * * * * * * * * *81 3 5@8::} d 4 p . i. a . 1；a.(1)(a) i) a) T 0 * *。,我们X ' h p X (# % '0*,；81 3 5@8:：} d 4 p 0 * *。,我们​,3 ' 1 mac正常在本研究计划中，PI描述了一种光电子器件和电路的瞬态模拟方法。半导体方程将表示为等效电路元件，并使用公共领域电路模拟器求解。该技术除了具有在电路模拟器中嵌入混合模式器件和电路仿真功能的固有优势外，还可以通过优化提取器件和电路级模型参数来匹配测量数据。PI将利用该模拟工具开发超快光电探测器和单片接收器。越来越多的人认为，为了有效地设计和优化半导体器件和集成电路，作为独立实体使用的过程、器件和电路仿真工具需要集成到一个组合仿真环境中。提出的研究将瞬态器件仿真纳入公共领域电路模拟器，为研究人员提供集成的仿真工具。这种集成将缩短新技术的开发周期，因为它提供了对设备和电路层面上各种物理现象的准确预测，并允许对电路环境中详细的设备行为进行调查。光电器件通常是单片集成的电子电路，如放大器，特别是用于高速应用。为了更好地理解oeic，能够在器件级进行瞬态分析的仿真工具可以直接与电路级组件接口，这将是非常宝贵的。混合模式仿真技术除了其固有的优点外，还可以用于提取新型电子和光电子器件的电路级模型参数。这种提取技术将为新设备的模型开发提供一种非常快速的方法。利用交流精确表征光电元件的能力，我们将设计出新颖的结构。设计工作将导致新的光电器件和电路的工作带宽接近100 GHz。* * *

WPCf 2 B J d | x MACNormal p 5 X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P T I. A. 1. a.(1)(a) i) a) T 0 * * . , US X ` h p x (# % '0* , .81 3 5@8 : : } D 4 P 0 * * . , US , 3 ' 1 MACNormal Unlu 9309607 In this research proposal, the PI has described a method for transient simulation of optoelectronic devices and circuits. The semiconductor equations will be represented as equivalent circuit components and solved using a public domain circuit simulator. Besides the inherent advantage of providing mixed mode device and circuit simulation capability embedded in a circuit simulator, this technique can also be used for extracting the device and circuit level model parameters to match measured data through optimization. The PI will utilize this simulation tool to develop ultrafast photodetectors and monolithic receivers. There exists a growing consensus that the process, device, and circuit simulation tools used as separate entities need to be integrated into a combined simulation environment for efficient design and optimization of semiconductor devices and integrated circuits. The proposed research will incorporate the transient device simulation into a public domain circuit simulator providing the researchers with an integrated simulation tool. Such integration will shorten the development cycle for new technologies by providing accurate predictions of various physical phenomena on the device and circuit level and by allowing the investigation of detailed device behavior within the circuit environment. Optoelectronic devices are usually monolithically integrated with electronic circuits such as amplifiers, especially for high speed applications. For better understanding of OEICs, a simulation tool capable of transient analysis at device level which can be directly interfaced with circuit level components will be invaluable. Besides its inherent advantages, mixed mode simulation technique can also be used for extracting circuit level model parameters for new electronic and optoelectronic devices. This extraction technique will yield a very fast method for model development for new devices.Using the capability of ac curately representing optoelectronic components we will design novel structures. The design efforts will result in new optoelectronic devices and circuits with operation bandwidths approaching 100 GHz. ***