Kinetics and Reactor Design of Copper CVD Processes

摘要格里芬和马弗里克-9311527铜金属化是制造超大规模集成电路器件的一种潜在的新材料技术。铜的优点包括低电阻率和高抗电和应力迁移。与其他沉积方法相比，化学气相沉积(CVD)具有几个优点，包括能够在高深宽比特征(例如沟槽和多层金属化)上获得良好的薄膜一致性。该项目旨在研究建立低温CVD铜薄膜作为ULSI器件的一种新的金属化技术所需的反应物、机理和反应器设计准则。主要目标是建立各种铜化学气相沉积过程的定量的、机械性的速率表达式和反应器传输模型。这些模型将被用于分析特定CuI和CuII化合物的实验生长速率，这些化合物使用垂直流动的单晶片反应器进行测量。将特别关注高转化率下的产物抑制效应，最终的动力学结果将与高比表面积铜粉上的配体吸附/解吸动力学的独立研究相补充。V L SITEVST 91S#y 2‘HEMADV 91S JW S’ssay BK！AGV b？EFFERS1BK！VO；JEFFERS1JAC诉S；欧洲BK！N‘EURALNEBK！F，=COV 91 YC摘要-Griffin&amp；Maverick-9311527铜金属化是一种潜在的制造超L的新材料技术！~X！！D X X(Times New Roman符号&amp；Arial O“HE e/Maria K.Burka Maria K.Burka

Abstract - Griffin & Maverick - 9311527 Copper metallization is a potential new material technology for manufacturing ultra large scale integration (ULSI) devices. Advantages of copper include low resistivity and high resistance to electro- and stress-migration. Chemical vapor deposition (CVD) offers several advantages relative to other deposition methods including the ability to achieve good film conformality over high-aspect ratio features (for example, trenches and multi-level metallizations). This project is aimed at studying the reactants, mechanisms, and reactor design criteria needed to establish low-temperature CVD of copper thin films as a new metallization technology of ULSI devices. The primary goal is to develop quantitative, mechanistic rate expressions and reactor transport models of various Cu CVD processes. These models will be applied to analyze experimental growth rates for specific CuI and CuII compounds measured using a vertical flow, single wafer reactor. Special attention will be given to product inhibition effects at high conversion, to which end kinetic results will be complemented with independent studies of ligand adsorption/desorption kinetics on high surface area copper powders. V l SITEVST 91S #y 2 ÕHEMADV 91S jW s ÕSSAY BK! AGV b ÕEFFERS1BK! V O ; JEFFERS1JAC V S ; ÕURFRM7 ÕEURNE BK! n ÕEURALNEBK! F , = COV 91 yC Abstract - Griffin & Maverick - 9311527 Copper metallization is a potential new material technology for man ufacturing ultra l ! ( * X ~ X ! ! D X X ( Times New Roman Symbol & Arial O O " h E e / Maria K. Burka Maria K. Burka