Gallium Arsenide Heterostructures by Optical Detection of Pulsed Nuclear Magnetic Resonance

9311913哈恩半导体核磁共振敏感光学检测技术将用于研究砷化镓异质结和量子阱的性质。OD核磁共振测量将包括电场、奈特位移、掺杂成分和杂质。为了提高检测灵敏度和通用性，将发展一种新的脉冲和双共振的OD核磁共振技术，并将其应用于砷化镓异质结，以超越传统的连续波OD核磁共振技术。这项研究将集中在光致GaAs表面自旋极化和外部自旋系统之间的自旋-自旋耦合的研究。这个研究项目将开发涉及光谱学技术和射频核磁共振波谱技术的新技术。利用光学或激光光谱学方法放大和检测原子核与射频信号之间相对较弱的相互作用。这些技术将应用于半导体上的表面原子。目的是检测半导体中的电子向驻留在半导体表面的非半导体原子的磁性转移。研究结果将具有重要意义，并将为半导体技术的潜在应用提供独特的信息。***

9311913 Hahn The technique of sensitive optical detection of nuclear magnetic resonance (ODNMR) in semiconductors will be applied to study the properties of gallium arsenide heterostructure and quantum wells. ODNMR measurements will be made of electric fields, Knight shifts, doped constituents, and impurities. A new pulsed and double resonance ODNMR technique will be developed and applied to GaAs heterostructures in order to improve the detection sensitivity and versatility beyond conventional cw ODNMR techniques. The research will focus on the study of spin-spin coupling between photo-induced GaAs surface spin polarization and external spin systems. %%% This research project will develop new techniques involving optical spectroscopy techniques and radio-frequency nuclear magnetic resonance spectroscopy techniques. The relatively weak interaction between a nucleus and a radio-frequency signal is amplified and detected by optical or laser spectroscopy methods. These techniques will be applied to surface atoms on semiconductors. The objective to detect a transfer of magnetism from electrons in the semiconductors to non-semiconductor atoms residing on the semiconductor surface. The results will be of fundamental interest and will provide unique information of potential application in semiconductor technology. ***