Fort Monmouth: Fundamental Speed Limitation of Inx Gal-x As HEMT and MESFET

Ga1-xINxAS金属半导体场效应晶体管（mesfet）和高电子迁移率晶体管（hemt）的基本速度限制计划的目标是制造0.05 um栅极长度的GaAs mesfet和hemt，并在微波频段（DC-40GHz）和温度范围（300K至30K）上对这些器件进行速度表征。这些测量信息使我们能够确定高场电子速度作为电场的函数，并建立一个简单的模型来预测Ga1-xINxAS mesfet和hemt的0.05 um栅极长度的基本速度限制。这些信息也使我们能够验证场效应管中弹道效应的存在。＊＊＊

9313936 Feng The objective of Fundamental Speed Limitation of Ga1-xINxAS Metal- Semiconductor Field Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) program is to fabricate 0.05 um gate length GaAs MESFETs and HEMTs, and to perform speed characterization of these devices over the microwave frequency band (DC-40GHz) and over a temperature range (300K to 30K). This measured information allows us to determine the high field electron velocity as a function of electrical field and to develop a simple model to predict the fundamental speed limitation of 0.05 um gate length of Ga1-xINxAS MESFETs and HEMTs. This information also allows us to verify the existence of the ballistic effect in FETs. ***