Ion-Mixing and Related Planar Processing Techniques for Monolithic Integration of Photonic Devices

9321209于安超晶格的离子混合作为一种平面光子集成电路制造工艺的研究将进行。 离子混合有望成为用于光子集成电路的通用、高产率制造方法，其仅需要单个外延生长步骤，并且提供平面结构。 我们已经证明了在低于600 ℃的温度下，使用离子混合在由InGaAs/InP和AlGaAs/GaAs材料制成的超晶格结构中诱导组分无序的可行性，其中具有诸如氩和氧的离子并且具有低离子剂量。 本论文的主要目的是：（1）研究离子混合和固相再生长相结合的超晶格无序和光弹性效应的器件集成，（2）将该技术推广到探索性的光电材料，如InGoT/GaAs和InGoT/InAsP/InP，（3）将该技术结合到具有分布式布拉格反射器的可调谐激光器的制造中，具有可调谐滤波器的光检测器，（4）使用离子混合和相关技术改进光纤-波导耦合，（5）在异质结双极晶体管的基极中引入超晶格无序以改进性能和可制造性。 ***

9321209 Yu An investigation of ion-mixing of superlattices as a processing technology for the fabrication of planar photonic integrated circuits shall be undertaken. Ion-mixing has the promise of being a versatile, high yield fabrication approach for photonic integrated circuits requiring only a singly epitaxial growth step, and providing a planar structure. We have demonstrated the feasibility of using ion-mixing to induce compositional disorder in superlattice structures made of InGaAs/InP and AlGaAs/GaAs materials at temperatures below 600{SYMBOL 176 \f "Symbol"}C with ions such as argon and oxygen and with low ion doses. The following objectives will be pursued (1) investigation of the device integration using a combination of ion-mixing and solid phase regrowth for superlattice disordering, and photo elastic effects, (2) extension of the technique to exploratory optoelectronic materials such as InGoT/GaAs and InGoT/InAsP/InP, (3) incorporation of the techniques in the fabrication of tunable lasers with distributed Bragg reflector, photo detector with tunable filter, (4) improvement of fiber-waveguide coupling using ion-mixing and related techniques, (5) incoporation of superlattice disordering in the base of heterojunction bipolar transistor to improve performance and manufacturability. ***