Interaction of Germanium with Surfactants on the Silicon (100) Surface

9413245研究杂质(表面活性剂)对锗在硅表面异质外延生长的影响。这种材料系统之所以被选中，是因为它代表了一种模型应变异质外延系统，对此已有很多了解。表面杂质，如H或Sb，已被发现显著改变生长层的形态和结构。为了了解杂质原子所起的微观作用，我们将利用离子沟道传输技术研究生长在硅上的单层锗薄膜的原子结构和组成。%材料科学的一个重要目标是能够制造出具有特定理想性能的定制材料。实现这一目标的重要一步是学习如何在一种材料上生长高质量的水晶层。完美的生长可以被各种因素所抑制，包括覆盖层形成岛屿的倾向、缺陷的产生等。最近的研究表明，某些杂质，通常被称为表面活性剂，可以对生长的薄膜的结构和性能产生巨大的影响。用一种新的离子散射技术研究表面活性剂影响锗在硅上生长的机理，这是一个重要的技术体系。利用这种技术，可以测量生长薄膜的原子结构和成分。***

9413245 Seiberling The influence of impurities (surfactants) on the heteroepitaxial growth of germanium on the (100) surface of silicon will be investigated. This materials system has been chosen because it represents a model strained heteroepitaxial system, about which much is already known. Surface impurities, such as H or Sb, have been found to dramatically alter the morphology and structure of a growing layer. The transmission ion channeling technique will be applied to investigate the atomic structure and composition of monolayer germanium films growing on silicon in order to understand the microscopic role played by the impurity atoms. % % % % An important goal in materials science is to be able to build tailor-made materials with specific desirable properties. A major step in fulfilling this goal is to learn how to grow high quality crystalline layers of one material on another. Perfect growth can be inhibited by various factors, including a tendency of the overlayer to form islands, the creation of defects, etc. It has recently been shown that certain impurities, often referred to as surfactants, can have a dramatic effect on the structure and properties of a growing film. The mechanism by which surfactants influence growth of germanium on silicon, an important technological system, will be studied using a novel ion scattering technique. With this technique it is possible to measure the atomic structure and the composition of the growing film. ***