Low Temperature Growth and Surface Chemistry of Strained Germanium Films on Silicon(100)

硅上应变锗薄膜的低温生长和表面化学(100)

• 批准号: 9022928
• 负责人: Lucy Seiberling
• 金额: --
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-06-01 至 1995-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9022928&HistoricalAwards=false
• 关键词: Low; Temperature; Growth; Surface; Chemistry

This research is concerned with fundamental problems involving the growth and characterization of thin heteroepitaxial germanium films on crystalline silicon substrates with a (100) orientation which exhibits a 2 x 1 surface reconstruction. Recent theoretical and experimental studies have given support for dramatic changes in the electronic band structure of germanium/silicon systems resulting from changing the strain and superlattice composition on an atomic scale. This group has found evidence for pseudomorphic domains in germanium films on silicon grown at room temperature. It is now proposed to investigate the structure of thin germanium films on silicon grown at low temperatures and also as a function of temperature. This work involves a unique combination of analytic techniques: transmission ion channeling, scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. A second emphasis will involve the surface chemistry of adatoms on strained germanium. It is hoped one can distinguish the seperate roles played by chemistry, geometry, and strain in determining the bonding site of the adatom. Initially tin and sulfur will be employed as adatoms.

本研究涉及在晶硅衬底上生长和表征具有2×1表面重构的(100)取向的薄的异质外延锗薄膜的基本问题。最近的理论和实验研究支持了在原子尺度上改变应变和超晶格组成引起的锗/硅体系电子能带结构的显著变化。该小组发现了在室温下生长的硅上的锗薄膜中存在假象结构域的证据。现在建议研究在低温下生长的硅上的Ge薄膜的结构，以及作为温度的函数。这项工作涉及分析技术的独特组合：透射式离子沟道、扫描隧道显微镜、低能电子衍射和俄歇电子能谱。第二个重点将涉及应变锗表面原子的表面化学。人们希望能够区分化学、几何和应变在确定吸附原子的键位方面所起的单独作用。最初，锡和硫将被用作附原子。