NSF-CGP Science Fellowship Program: Effects of Cu Concentration and Line Width on Electromigration-Induced Submicron Al Interconnects

9418769 Grosjean这项建议支持日本电气公司筑波分部和大阪大学UTRA高压电子显微镜研究中心的David Grosjean博士获得为期两年的博士后奖学金。项目资金将使Grosjean博士能够在日本NEC工作两年，与冈桥英一博士和其他日本电气工程师一起进行微电子研究。PI计划致力于解决亚微米铝线中铝原子在高电流密度下的电迁移这一极具挑战性和技术重要性的问题。他还将获得金属薄膜制备、电气特性和应力设备方面的知识。作为博士后研究员，Grosjean博士将有机会熟悉NEC公司和大阪大学的研究技术和设备。因此，这项建议实现了该计划通过国际合作交流和转让科学知识的目标。***

9418769 Grosjean This proposal supports a two-year postdoctoral fellowship for Dr. David Grosjean at NEC Corporation at Tsukuba and at the Research Center for Utra-High Voltage Electron Microscopy at Osaka University. Project funding will enable Dr. Grosjean to spend two years in Japan, resident at NEC, in order to conduct research on microelectronics with Dr. Hidekazu Okabayashi and other Japanese electrical engineers. The PI has proposed to work on the very challenging and technologically important problem of the electromigration of aluminum atoms at high electric current density in submicron aluminum lines. He will also gain knowledge of metal film preparation and electrical characterization and stressing equipment. As a postdoctoral fellow, Dr. Grosjean will have the opportunity to become familiar with research techniques and equipment at NEC Corporation and Osaka University. Therefore, this proposal fulfills the objectives of the Program in its exchange and transfer of scientific knowledge through an international collaboration. ***