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Scaleup of the 'Electron Jet' Jet Vapor Deposition Source

Scaleup of the 'Electron Jet' Jet Vapor Deposition Source
“Electron Jet”喷射气相沉积源的放大
批准号:
9460604
负责人:
Bret Halpern
金额:
$6.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-02-01 至 1995-11-30

项目摘要

项目成果

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中文摘要
翻译
这个小型企业创新研究第一阶段项目旨在为一种强大的新型薄膜喷射气相沉积(JVD)源的规模扩大和商业应用奠定基础,“电子喷射,或e-jet”,最近由Jet Process Corporation (JPC)发明。JVD因其使用“低真空声波射流”以高速率沉积高质量的金属,半导体,氧化物,氮化物和有机物薄膜而获得越来越多的认可。e-jet有潜力结合非常高的沉积速率和非常精确的原位控制生长薄膜的特性。这是通过低能量离子的高通量离子轰击来实现的,这种能力是由e-jet等离子体异常高的离子密度实现的。JPC正在与几家大公司合作,在这些应用中,e-jet提供了唯一有前途的、商业上可行的解决方案。为了实现e-jet对超高通量和精细性能控制的承诺,他们提出研究和优化e-jet性能对薄膜质量至关重要的因素:簇的形成和生长,等离子体离子密度和离子在偏压衬底上的冲击能量。在第一阶段,JPC将使用质谱法、Langmuir探针方法和延迟电位技术来解决这些问题。第一阶段的成功将导致JVD源具有极高的吞吐量,薄膜质量控制,无污染操作,并适用于许多材料;在第二阶段,将建造一个速度快10倍的电子喷气机,用于商业应用。e-jet性能的提高将在广泛的应用中为JPC及其承包商带来直接的经济效益。
英文摘要
This Small Business Innovation Research Phase I project aims to lay the foundation for scaleup and commercial application of a powerful new thin film Jet Vapor Deposition (JVD) source, the `electron jet, or e-jet`, recently invented at Jet Process Corporation (JPC). JVD is gaining increased recognition for its use of `sonic jets in low vacuum` to deposit high quality films of metals, semiconductors, oxides, nitrides, and organics at high rate. The e-jet has the potential to combine very high rates of deposition with very precise in-situ control of the properties of the growing film. This is done by high flux ion bombardment with low energy ions, a capability made possible by the unusually high ion density of the e-jet's plasma. JPC is collaborating with several large companies on applications where the e-jet offers the only promising, commercially viable solution. In order to realize the e-jet's promise of ultra-high throughput and fine property control they propose to investigate and optimize e-jet performance factors critical to film quality: cluster formation and growth, plasma ion density, and ion impact energy on biased substrates. In Phase I JPC will use mass spectrometry, Langmuir probe methods, and retarding potential techniques to address those issues. Success in Phase I will result in a JVD source capable of extremely high throughputs, control of film quality, pollution free operation, and application to many materials; in Phase II a tenfold faster e-jet will be constructed for commercial applications. Enhancement of e-jet performance will lead to immediate economic benefits for JPC and its contractors in a wide range of applications.
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SBIR PHASE II: Development and Scaleup of the "Electron Jet" Jet Vapor Deposition Source
  • 批准号:
    9703963
  • 项目类别:
    Standard Grant
  • 资助金额:
    $28.78万
  • 财政年份:
    1997
  • 负责人:
    Bret Halpern
  • 依托单位:
An Electron Pumped, Thin Film, Solid Host Dye Laser
  • 批准号:
    9461215
  • 项目类别:
    Standard Grant
  • 资助金额:
    $6.5万
  • 财政年份:
    1995
  • 负责人:
    Bret Halpern
  • 依托单位:
Photobleachable Host-Guest Thin for Integrated Optical Devices
  • 批准号:
    9303207
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    1993
  • 负责人:
    Bret Halpern
  • 依托单位:
Photobleachable Host-Guest Thin Films for Optical Waveguides
  • 批准号:
    9160294
  • 项目类别:
    Standard Grant
  • 资助金额:
    $5.0万
  • 财政年份:
    1992
  • 负责人:
    Bret Halpern
  • 依托单位:
国内基金
海外基金
Muon--electron转换过程的实验研究