SBIR PHASE II: Development and Scaleup of the "Electron Jet" Jet Vapor Deposition Source

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*** 9703963 Halpern This Small Business Innovation Research (SBIR) Phase II project will enhance the capabilities of the "electron jet", or "e-jet," thin film deposition source. E-jet is a versatile source for the Jet Vapor Deposition (JVD) process. JVD uses supersonic "jets in low vacuum" to deposit metals, semiconductors, oxides, nitrides, in alloy, multicomponent, multilayer, and doped structures. JVD is a low cost, environmentally clean process with economic promise in semiconductor integrated circuits (IC), metal strip coating, protective layers, and optics. The e-jet can vaporize any metal and deposit films at high rate, and its high plasma ion density enables low energy, high flux ion bombardment. Deposition rate and ion bombardment are critical to various applications. This project will optimize e-jet metal throughput and ion density in order to maximize deposition rate, extend source life, and control film properties. Phase II will conduct mass spectrometer studies of metal atom clustering (a rate limiter), investigate hydrogen atom chemical energy deposition, develop a high rate powder feed e-jet, and investigate e-jet deposition of silicon nitride for gate dielectrics and copper for trench fill. Commercial applications are expected in metal strip coating of electrical interconnects, silicon nitride deposition for semiconductor IC circuit gate dielectrics, and protective thermal barrier coatings, such as in turbine blades.