SBIR PHASE II: Development and Scaleup of the "Electron Jet" Jet Vapor Deposition Source

SBIR 第二阶段：“Electron Jet”喷射气相沉积源的开发和规模化

• 批准号: 9703963
• 负责人: Bret Halpern
• 金额: $ 28.78万
• 依托单位: Jet Process Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-11-01 至 1999-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9703963&HistoricalAwards=false
• 关键词: SBIR; PHASE; II; Development; Scaleup

*** 9703963 Halpern This Small Business Innovation Research (SBIR) Phase II project will enhance the capabilities of the "electron jet", or "e-jet," thin film deposition source. E-jet is a versatile source for the Jet Vapor Deposition (JVD) process. JVD uses supersonic "jets in low vacuum" to deposit metals, semiconductors, oxides, nitrides, in alloy, multicomponent, multilayer, and doped structures. JVD is a low cost, environmentally clean process with economic promise in semiconductor integrated circuits (IC), metal strip coating, protective layers, and optics. The e-jet can vaporize any metal and deposit films at high rate, and its high plasma ion density enables low energy, high flux ion bombardment. Deposition rate and ion bombardment are critical to various applications. This project will optimize e-jet metal throughput and ion density in order to maximize deposition rate, extend source life, and control film properties. Phase II will conduct mass spectrometer studies of metal atom clustering (a rate limiter), investigate hydrogen atom chemical energy deposition, develop a high rate powder feed e-jet, and investigate e-jet deposition of silicon nitride for gate dielectrics and copper for trench fill. Commercial applications are expected in metal strip coating of electrical interconnects, silicon nitride deposition for semiconductor IC circuit gate dielectrics, and protective thermal barrier coatings, such as in turbine blades.

*** 9703963哈尔彭 这个小企业创新研究（SBIR）第二阶段项目将提高“电子喷射”或“电子喷射”薄膜沉积源的能力。 E-jet是喷射气相沉积（JVD）工艺的多功能源。 JVD使用超音速“低真空喷射”来存款金属、半导体、氧化物、氮化物、合金、多组分、多层和掺杂结构。 JVD是一种低成本、环境清洁的工艺，在半导体集成电路（IC）、金属带涂层、保护层和光学器件中具有经济前景。 e-jet可以以高速率蒸发任何金属和存款膜，并且其高等离子体离子密度实现低能量、高通量离子轰击。 沉积速率和离子轰击对各种应用至关重要。 该项目将优化电子喷射金属吞吐量和离子密度，以最大限度地提高沉积速率，延长源寿命，并控制薄膜性能。 第二阶段将进行金属原子团簇（速率限制器）的质谱仪研究，研究氢原子化学能沉积，开发高速率粉末进料电子喷射，并研究用于栅极抛光的氮化硅和用于沟槽填充的铜的电子喷射沉积。 预期在电互连的金属带涂层、用于半导体IC电路栅极绝缘层的氮化硅沉积和保护性热障涂层（例如在涡轮机叶片中）中有商业应用。