Japan STA Program: Investigation of the Deep Levels of GaN by Optical and Transient Capacitance Methods

9508780哈克该奖项为日本科学技术厅提供为期24个月的博士后奖学金，授予位于日本筑波的日本国际贸易产业省工业科学技术厅电工实验室的彼得·哈克博士。Hacke博士将与Hideyo Okushi博士一起在电工实验室研究氮化镓(GaN)半导体的物理。这项拟议的研究旨在确定GaN中的杂质和缺陷的性质，这些杂质和缺陷会在带隙中产生载流子陷阱，从而降低器件性能。具体地说，研究人员想要确定n型GaN中已知的深施主能级的原因，并检查是否存在更深的能级。作为一名博士后研究员，哈克博士将有机会熟悉电工实验室的研究技术和设备，同时为整个研究工作做出贡献。因此，这项建议实现了该计划通过国际合作交流和转让科学知识的目标。***

9508780 Hacke This award supports a 24-month Science and Technology Agency of Japan Postdoctoral Fellowship for Dr. Peter Hacke of the Electrotechnical Laboratory of the Agency of Industrial Science and Technology (AIST) within the Ministry of International Trade and Industry (MITI) in Tsukuba, Japan. Dr. Hacke will work with Dr. Hideyo Okushi at the Electrotechnical Laboratory examining the physics of the gallium nitride (GaN) semiconductor. The proposed research aims to determine the nature of the impurities and defects in GaN that create carrier traps in the band gap that can reduce device performance. Specifically, the investigators would like to determine the cause of the deep donor levels known to exist in n-type GaN and examine for the existence of deeper levels. As a postdoctoral fellow, Dr. Hacke will have the opportunity to become familiar with research techniques and equipment at the Electrotechnical Laboratory while contributing to the overall research effort. Therefore, this proposal fulfills the objectives of the Program in its exchange and transfer of scientific knowledge through an international collaboration. ***