U.S.-Germany Cooperative Research: Microstructure and Alloying Effects on the Reliability of Conductor Lines

该奖项支持来自斯坦福大学的William Nix教授和John Bravman教授以及两名研究生与德国斯图加特大学冶金研究所的Eduard Arzt教授及其研究小组合作研究电子材料的故障。 Arzt教授和他的学生开创了“界面控制”变形过程的研究，他们开发了一种研究电迁移失效的新技术。 由Nix教授领导的美国研究小组已经开发出模型来描述导体线路中离子的流动和积累以及空隙形成的初始阶段。 他们还拥有专门的设备，用于研究金属线中空洞的形成和传播。 集成电路小型化的进步已经使金属导线暴露于日益苛刻的操作条件。 这项研究合作的目的是更好地了解控制集成电路中导线可靠性的微观结构和合金效应。 这些线通常携带非常高的电流密度，导致原子从一个地方迁移到另一个地方，从而产生损伤部位。 这导致在周围材料中形成空隙和裂纹，这是小型化电子器件的主要可靠性问题的原因。 加入这些美国和德国研究小组的互补专业知识将加速理解导体线路中这种关键电迁移现象的进展。

This award supports Professors William Nix and John Bravman, plus two graduate students, all from Stanford University, to collaborate in studies of failures in electronic materials with Professor Eduard Arzt and his research group of the Institute for Metallurgy of the University of Stuttgart, Germany. Professor Arzt and his students have pioneered the study of `interface controlled` deformation processes, and they have developed a new technique for studying electromigration failure. The U.S. group led by Professor Nix has developed models to describe the flow and accumulation of ions in conductor lines and the initial stages of void formation. They also have specialized equipment for studying the formation and propagation of voids in metal lines. Advances in miniaturization of integrated circuits have exposed the metallic conductor lines to increasingly severe operating conditions. The aim of this research collaboration is to develop a better understanding of the microstructural and alloying effects that control the reliability of conductor lines in integrated circuits. These lines typically carry very high current densities which causes atoms to migrate from one place to another creating damage sites. This leads to the formation of voids and cracks in the surrounding materials, which is the cause of major reliability problems for miniaturized electronic devices. Joining the complementary expertise of these U.S. and German research groups will accelerate progress in understanding such critical electromigration phenomena in conductor lines.