Processing and Devices for Integrated Optoelectronics in GaN and Related Compounds

9521671阿德西达在过去十年中，在宽带隙氮化物外延生长的发展方面取得了重大进展，取得了积极的成果。也许这一产量中最重要的发展是高亮度蓝色LED的展示和商业化。这些成就在世界各地的各种实验室中产生了广泛的研究活动。这些活动的主要重点仍然是外延生长。从文献中可以明显看出，在氮化物生长方面取得的出色进展并不是通过将这些材料转化为器件所需的处理方法的相应进步来实现的。一些加工问题与传统的III-V化合物半导体材料的加工问题有很大的不同，因此开发用于制造氮化物中的器件的可变加工技术已成为当务之急。此外，至关重要的是开始培训研究生，他们将构成未来生产这些材料设想的令人印象深刻的一系列产品所需的人力资源。因此，我们的建议研究是由于GaN和相关化合物生长的持续改进，以及开发将这些材料转化为高性能器件和电路所需的加工方法的需要。拟议研究的主要目标是为III-V氮化物的刻蚀提供新的见解，开发在氮化物上形成欧姆和肖特基接触的新方法，并开发工作在UV波长的高性能光电集成光接收器。其具体目标是1)开发和了解适用于在氮化物中制造激光龙头和反射镜的高度各向异性和“无损伤”刻蚀工艺的机制；2)开发低接触电阻的欧姆接触并了解接触形成的机制；3)研究难熔金属和硅化物在氮化物上的肖特基势垒特性；以及4)制造和表征金属-半导体-金属(MSM)光电探测器和GaN金属-半导体场效应晶体管(MESFET)，并为它们的集成开发技术基础。这项工作将与明尼阿波利斯APA光学公司的M.Asif Khan博士合作完成，他将提供工作中使用的外延氮化物。***

9521671 Adesida Over the last decade, significant improvements in the development of the epitaxial growth of wide bandgap nitrides have yielded positive results. Perhaps the most significant development in this yield has been the demonstration and commercialization of high luminosity blue LEDs. These achievements have engendered a broad spectrum of research activities in various laboratories world wide. The major emphasis of these activities continues to be on epitaxial growth. It is evident from literature that the excellent progress made in the growth of nitrides has not been accomplished by a commensurate progress in the processing methods that are required to turn these materials into devices. Some of the processing problems are sufficiently different from those of conventional III-V compound semiconductor materials, that the development of variable processing techniques for the fabrication of devices in the nitrides has become imperative . Further, it is of cardinal importance to begin training the graduate students who will constitute the human resources needed in the future to manufacture the impressive array of products that are envisaged from these materials. Our proposal research is therefore motivated by the continued improvement in the growth of GaN and related compounds and the need to develop processing methods required to turn these materials into high performance devices and circuits. The broad goals of the proposed research are to provide new insights into the etching of III-V nitrides, to develop new methodologies for the formation of ohmic and Schottky contacts on nitrides , and to develop high performance optoelectronic integrated photoreceivers operating at UV wavelengths. The specific objectives are to 1) develop and understand mechanism for highly anisotropic and "no-damage" etching processing suitable for the fabrication of laser faucets and mirrors in the nitrides; 2) develop ohmic contacts with low contact resistance and to understand the mechanism of contact formation ; 3) investigate Schottky barrier properties of refractory metals and silicides on the nitrides; and 4) fabricate and characterize metal-semiconductor-metal (MSM) photodetectors and GaN metal-semiconductor field-effect transistors (MESFETs) and to develop the technological basis for their integration. The work will be done in collaboration with Dr. M. Asif Khan of APA Optics, Minneapolis, w ho will provide the epitaxial nitrides uses in the work. ***