Theoretical and Experimental Investigation of InP-Based PNP Heterojunction Bipolar Transistors

这是辛辛那提大学和休斯研究实验室之间的一项合作研究，旨在提高基于inp的PNP异质结组件的性能。该研究将包括建立和开发一种方法，第一个基于使用商业数值模拟器的漂移扩散模型。第二是基于集成蒙特卡罗模拟器的开发，该模拟器包括发射基结处的空穴隧道效应和整个器件中重孔和轻孔之间的带混合效应。随后，这两种方法将结合起来，提供一个设备操作的综合模型。此外，设备自热的热物理将通过描述热流的方程的自洽解和设备运行期间电荷产生和流动的物理过程来研究。为了确保设备模型的准确性，将对实验室制造的设备进行详细测量，并与商业制造的设备报告的结果进行比较。休斯研究实验室将提供用于制造PNP HBT器件的多层外延衬底，并将为HBT制造工艺的发展提供技术指导。＊＊＊

9525942 Cahay This is a collaborative research effort between University of Cincinnati and Hughes Research Laboratory to enhance the performance of InP-based PNP Heterojunction component of the research will consist of establishing and developing an approaches, the first based on use of a drift-diffusion model using a commercial numerical simulator, and the second based on the development of an Ensemble Monte Carlo simulator which includes the effects of hole tunneling at the emitter-base junction and the effects of band-mixing between heavy and light holes throughout the device. Subsequently, the two approaches will be coupled to provide a comprehensive model of device operation. Furthermore, the thermophysics of device self-heating will be investigated through a self-consistent solution of the equations describing heat flow through the structure and the physics of charge generation and flow during device operation. To assure the accuracy of the device models, comparison of the device electrical characteristics and high frequency performance will be made with detailed measurements on devices fabricated in the laboratory and with results reported on commercially fabricated devices. In collaboration with this effort the industrial partner Hughes Research Laboratory, will provide the starting multi-layer epitaxial substrates from which the PNP HBT devices will be fabricated and will provide technical guidance in the development of the HBT's fabrication process. ***