The Use of Surfaces of Rare-Earth Elements to Achieve Durable Negative Electron Affinity Cold Cathodes, Photocathodes, and Polarized Electron Sources

利用稀土元素表面实现耐用的负电子亲和力冷阴极、光电阴极和极化电子源

• 批准号: 9906053
• 负责人: Marc Cahay
• 金额: $ 22.64万
• 依托单位: University of Cincinnati Main Campus
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-08-01 至 2003-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9906053&HistoricalAwards=false
• 关键词: Use; Surfaces; Rare; Earth; Elements

9906053CahayIn this proposal, we will study both theoretically and experimentally several cathodes and photocathodes fabricated using GaAs and JnP-based materials activated to NEA with NdS and LaS surfaces, respectively. Our ultimate goal is to build prototypes of (1) InP/LaS and GaAs/NdS Schottky barrier transferred electron photoemitters, (2) cold cathodes based on pn GaAs and ImP diodes, (3) JnP/InAlAs and AlGaAs/GaAs cold cathode and photocathode heterojunctions, and (4) GaAsP/GaAs and InP/InAlAs polarized electron sources.Our research effort will consist of a three-year project between the University of Cincinnati (LaS and NdS growth and characterization and device fabrication), Uppsala University (Electronic Structure Calculations), Ovation Semiconductor in Rochester (MN) (MBE growth of III-V heterostructures), Sarnoff Corporation (NJ) (electrical testing of the cathodes), and the Stanford Linear Accelerator Center (SLAC) (test of devices as efficient polarized electron sources).The cold cathodes and photocathodes to be developed in this program could lead to a billion dollar industry due to their wide range of applications including fiat panel displays, photomultipliers, pressure sensors, high-temperature or radiation tolerant sensors, vacuum transistors, and high power microwave tubes. Simultaneously, polarized electron sources find applications in fundamental research in solid state, atomic and high energy physics.***

在这个提议中，我们将从理论和实验上研究几个阴极和光电阴极制造使用GaAs和InP基材料激活NEA与NdS和LaS表面，分别。我们的最终目标是建立（1）InP/LaS和GaAs/NdS肖特基势垒转移电子光电发射器的原型，（2）基于pn GaAs和InP二极管的冷阴极，（3）异质结结/InAlAs和AlGaAs/GaAs冷阴极和光电阴极，（4）GaAsP/GaAs和InP/InAlAs极化电子源（LaS和NdS生长和表征以及器件制造），乌普萨拉大学（电子结构计算），Ovation Semiconductor，位于罗切斯特（明尼苏达州）（III-V异质结构的MBE生长），Sarnoff Corporation（NJ）（阴极的电测试），斯坦福大学直线加速器中心（SLAC）（作为有效极化电子源的器件的测试）。在该计划中将要开发的冷阴极和光电阴极由于其广泛的应用（包括平板显示器，光电倍增管、压力传感器、耐高温或耐辐射传感器、真空晶体管和高功率微波管。同时，极化电子源在固态、原子和高能物理的基础研究中得到应用。