The Use of Surfaces of Rare-Earth Elements to Achieve Durable Negative Electron Affinity Cold Cathodes, Photocathodes, and Polarized Electron Sources

利用稀土元素表面实现耐用的负电子亲和力冷阴极、光电阴极和极化电子源

基本信息

批准号：
9906053
负责人：
Marc Cahay
金额：
$ 22.64万
依托单位：
University of Cincinnati Main Campus
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
1999
资助国家：
美国
起止时间：
1999-08-01 至 2003-07-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9906053&HistoricalAwards=false
关键词：
Use Surfaces Rare Earth Elements

项目摘要

9906053CahayIn this proposal, we will study both theoretically and experimentally several cathodes and photocathodes fabricated using GaAs and JnP-based materials activated to NEA with NdS and LaS surfaces, respectively. Our ultimate goal is to build prototypes of (1) InP/LaS and GaAs/NdS Schottky barrier transferred electron photoemitters, (2) cold cathodes based on pn GaAs and ImP diodes, (3) JnP/InAlAs and AlGaAs/GaAs cold cathode and photocathode heterojunctions, and (4) GaAsP/GaAs and InP/InAlAs polarized electron sources.Our research effort will consist of a three-year project between the University of Cincinnati (LaS and NdS growth and characterization and device fabrication), Uppsala University (Electronic Structure Calculations), Ovation Semiconductor in Rochester (MN) (MBE growth of III-V heterostructures), Sarnoff Corporation (NJ) (electrical testing of the cathodes), and the Stanford Linear Accelerator Center (SLAC) (test of devices as efficient polarized electron sources).The cold cathodes and photocathodes to be developed in this program could lead to a billion dollar industry due to their wide range of applications including fiat panel displays, photomultipliers, pressure sensors, high-temperature or radiation tolerant sensors, vacuum transistors, and high power microwave tubes. Simultaneously, polarized electron sources find applications in fundamental research in solid state, atomic and high energy physics.***

9906053Cahayin本提案，我们将在理论上和实验上研究使用GAAS和基于JNP的基于NDS和LAS表面激活NEA的基于GAAS和JNP的材料制造的几个阴极和光座。 Our ultimate goal is to build prototypes of (1) InP/LaS and GaAs/NdS Schottky barrier transferred electron photoemitters, (2) cold cathodes based on pn GaAs and ImP diodes, (3) JnP/InAlAs and AlGaAs/GaAs cold cathode and photocathode heterojunctions, and (4) GaAsP/GaAs and InP/InAlAs polarized electron sources.Our research effort will consist of a three-year project between the University of Cincinnati (LaS and NdS growth and characterization and device fabrication), Uppsala University (Electronic Structure Calculations), Ovation Semiconductor in Rochester (MN) (MBE growth of III-V heterostructures), Sarnoff Corporation (NJ) (electrical testing of the cathodes), and the Stanford Linear Accelerator Center (SLAC) (test of设备作为有效的两极化电子源）。由于其广泛的应用，包括菲亚特面板显示器，光电传感器，高温或辐射耐受性传感器，真空透晶体管和高功率微型小管，因此，该程序中要开发的冷阴极和光电座可能会导致十亿美元的行业。同时，两极分化的电子来源在固态，原子和高能量物理学中发现了基础研究中的应用。***