Simulation of New Solid State Cold Cathode Emitters Using Current Carrying Thin Films

使用载流薄膜模拟新型固态冷阴极发射极

• 批准号: 9632511
• 负责人: Marc Cahay
• 金额: $ 6.44万
• 依托单位: University of Cincinnati Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-07-01 至 1999-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9632511&HistoricalAwards=false
• 关键词: Simulation; New; Solid; State; Cold

9632511 Cahay We analyze two new types of cold cathode emitters which consist of a thin wide bandgap semiconductor material sandwiched between a heavily doped semiconductor (or metallic material) and a low work function semimetallic thin film. First, we develop an Ensemble Monte Carlo (EMC) simulator to study electron transport in a Aluminum Gallium Nitride (AlGaN) / Gallium Nitride (GaN)/ Lanthanum Hexaboride (LaB6) cold cathode emitter recently proposed by Akinwande and coworkers. Our simulations focus on the calculation of the energy spectrum of electrons emitted into vacuum and the quantum efficiency of the new cold cathode. Then, using an analytical treatment, we show that under forward bias operation the electrons captured in the low work function material of a typical cold cathode are responsible for an effective reduction of the semimetallic film work function, leading to a substantial increase of the cathode emitted current. Since the investigation of this Dynamic Work Function Shift would be quite cumbersome using EMC simulations, we investigate it here using a semi-analytical treatment. Even though the dynamic work function shift could be observed in Akinwande's cold cathode emitter, we illustrate it here for a new type of cold cathode emitter using Cadmium Sulfide (CdS) as a wide bandgap semiconductor and Lanthanum Sulfide (LaS) as the semimetallic thin film. We will analyze the importance of current crowding in the proposed cold cathodes and will determine the range of dc bias over which cold cathodes of different width must be operated to minimize current crowding and self-heating effects. We will also study the possibility of current self-quenching in the new cold cathode as a function of the applied gate bias. This self-quenching will be examined in terms of the dynamics of the spacecharge effects in the region between the gate and the anode. These space-charge effects are expected to lead to the onset of current mscillations in the anode current. The period of these current oscillations will be calculated as a function of the applied gate bias. The simulation tools to be developed in this program can be easily modified to model a wide variety of other devices including: efficient blue and ultraviolet light-emitting devices, high-energy photodetection systems, flat panel displays, and microwave vacuum transistors, among others. ***

9632511 CAHAY我们分析了两种新型的冷阴极发射器，这些发射器由薄薄的带隙半导体材料组成，该材料夹在一个浓度掺杂的半导体（或金属材料）和低工作功能的半金属金属薄膜之间。 首先，我们开发了一个集合蒙特卡洛（EMC）模拟器，以研究氮化铝（Algan） /氮化铝（GAN） / Lanthanum Hexaboride（LAB6）冷阴极发射极发明器最近提出的Akinwande and Colorkers最近提出的冷阴极Emitter。 我们的模拟集中于计算发射到真空中的电子和新冷阴极的量子效率的计算。 然后，使用分析处理，我们表明在正向偏置操作下，典型冷阴极工作功能低的功能材料中捕获的电子负责有效减少半金属膜工作功能，从而大大增加发射电流的阴极。 由于使用EMC模拟对这种动态工作函数转移的研究将很麻烦，因此我们在此处使用半分析处理进行调查。 即使可以在Akinwande的冷阴极发射极中观察到动态功能转移，但我们在此处将其作为宽带硫化物（CD）（CDS）作为宽带的带隙半导体和半金属金属薄膜的新型冷阴极发射极进行了说明。 我们将分析当前拥挤在拟议的冷阴极中的重要性，并将确定必须在其中操作不同宽度的冷阴极以最大程度地减少当前的拥挤和自动加热效应的直流偏差范围。 我们还将研究新的冷阴极中电流自我衡量的可能性，这是应用门偏置的函数。 将根据栅极和阳极之间区域中的空间效应的动力学来检查这种自我Quenching。 这些空间充电效应有望导致阳极电流中电流MSCILL的开始。 这些电流振荡的周期将根据应用门偏置的函数计算。 可以轻松地修改该程序中要开发的仿真工具，以建模各种其他设备，包括：有效的蓝色和紫外线发光设备，高能光电检测系统，平板显示器以及微波炉真空晶体管等。 ***