GaN Vacuum Microelectronics Electron Emitter with IntegratedExtractor

近年来，真空微电子器件（VMDs）由于结合了真空管和现代半导体器件的优点，在高速、大功率器件和平板显示等领域引起了人们的极大兴趣。真空微电子技术成功的关键是固态电子发射体（ssee）的制备。为了在平板显示器上应用，ssee必须稳定，产生均匀的电子发射，效率高，电流密度适中。另一方面，对于中等射频功率放大器和大功率射频源的应用，ssee必须非常可靠，并产生具有高电流密度的电子发射。两种类型的ssee，即场发射体1和平面发射体2,3，过去已经报道过，并取得了一些成功。场致发光器件由于其固有的特性，具有很高的发射效率，在平板显示领域备受关注。近年来，由于现代半导体技术的快速发展，场发射阵列（FEAs）的发展取得了很大的进展。在本提案中，我们提出了一种基于反应离子蚀刻（RIE）和GaN点或楔形发射器选择性再生的独特制造工艺的GaN场发射极及其阵列。＊＊＊

9528606 Mishra In recent years, vacuum microelectronic devices (VMDs) have become of great interest in the fields such as high speed, high power devices and flat panel displays, because of they combine the advantages of both vacuum tubes and modern semiconductor devices. The key to the success of vacuum microelectronics is the fabrication of the solid-state electron emitters (SSEEs). For applicatimn in flat panel displays, it is required that SSEEs should be stable and generate uniform electron emission with high efficiency and moderate current density. On the other hand, for applications in medium RF power amplifiers and high power RF sources, SSEEs should be very reliable and generate electron emission with high current density. Two types of SSEEs, field emitters 1 and planar emitters 2,3 have been reported in the past with some success. Field emitters, due to its intrinsic nature, have very high emission efficiency and attracted much attention in the field of flat panel displays. Much progress has been made in recent years in the development of field emitters arrays (FEAs) 4, owing to the fast advance of modern semiconductor technologies. In this proposal, we propose a GaN based field emitter and its arrays with an unique fabrication process based on reactive ion etching (RIE) and selective regrowth of GaN point or wedge emitters. ***