Kinetic Energy Enhanced Neutral Beam Epitaxy

该奖项是在特别项目办公室，以支持 科罗拉多大学的斯蒂芬·利昂教授的研究表明， 巨石 这项工作的目标是研究动力学的基本方面， 低温下电子材料的能量增强中性束外延 衬底温度。 动能增强的中性原子将被 由电子束沉积的薄的脉冲激光蒸发产生 薄膜的透明基板，然后通过速度选择的 1-10 eV范围内的中性原子。待研究的系统包括钴， 铁、铂、钨、镍、钯、钛和钼 硅（100）上的原子、硅化钴以及 硅/锗。薄膜生长将由低能电子监测 衍射、俄歇能谱和扫描电子显微镜。时 将发展使用He+和Ne+的飞行离子散射光谱 为了确定作为膜的函数的膜的晶格间距 厚度和生长机制。 这项研究将解决金属薄膜沉积的基本原理， 对互连至关重要的硅衬底 在半导体上。 锗/硅系异质外延研究 诱导晶格应变，这提供了控制 光电器件的有效带隙结构。

This award is made in the Office of Special Projects in support of the research of Professor Stephen Leone at the University of Colorado at Boulder. The goal of the work is to study fundamental aspects of kinetic energy enhanced neutral beam epitaxy of electronic materials at low substrate temperatures. Kinetic energy enhanced neutral atoms will be produced by pulsed laser vaporization of electron beam-deposited thin films of transparent substrates followed by velocity selection of the neutral atoms in the 1-10 eV range. Systems to be studied include cobalt, iron, platinum, tungsten, nickel, palladium, titanium and molybdenum atoms on silicon (100), cobalt silicide, and the heteroepitaxy of silicon/germanium. Film growth will be monitored by low energy electron diffraction, Auger spectroscopy and scanning electron microscopy. Time of flight ion scattering spectroscopy using He+ and Ne+ will be developed to determine lattice spacings of the films as a function of film thickness and growth mechanism. This research will address the fundamentals of metal film deposition on silicon substrates which are of fundamental importance to interconnects on semiconductors. Heteroepitaxy studies of the germanium/silicon system induces lattice-strain which offers the opportunity to control the effective bandgap structure of optoelectronic devices.