SBIR Phase I: Anti-Reflective Coatings (ARCs) for 193nm Lithography

该小型企业创新研究（SBIR）第一阶段项目将开发最适合193 nm光学光刻应用的热固性抗反射涂层（ARC）。 这是继深紫外线（248 nm）之后的设备最可能的曝光波长。 由于在该较短波长处的反射系数与在248 nm处的反射系数相似或（在某些情况下）高于在248 nm处的反射系数，因此可以预期需要ARC覆盖193 nm抗蚀剂。 的研究目标是提供至少一个优秀的或最佳的193-nm的ARC的制造商使用期间，抗蚀剂的发展和生产的半导体器件。 光吸收发色团（193 nm）将化学连接到三种不同的聚合物主体上。 主体聚合物已被选择为高脂肪族含量，并期望它们将表现出改善的氧等离子体蚀刻速率。 为了确保在光致抗蚀剂溶剂中的不溶性，染料附着的聚合物将被配制成热固性系统（ARC）。 在最佳曝光和剂量下的193 nm抗蚀剂聚（甲基丙烯酸甲酯）（PMMA）的轮廓将用于优化ARC化学。 将固化的193 nm ARC的等离子体蚀刻速率与ARC CD 11进行比较。 将确定ARC稳定性和可制造性。 在第一阶段开发的ARC将在第二阶段进一步改进，并以放大的抗蚀剂为特征。 一个成功的产品将有助于集成电路制造商，为增加半导体衬底上的封装密度提供了希望。

This Small Business Innovation Research (SBIR) Phase I project will develop thermosetting anti-reflective coatings (ARCs) that are optimum for 193 nm optical lithography applications. This is the most likely exposure wavelength for the generation of equipment that follows deep-UV (248 nm). Since reflectivity coefficients at this shorter wavelength are similar or (in some instances) higher than those at 248 nm, a need for an ARC undeneath the 193 nm resist can be expected. The research objective of is to provide at least one outstanding or optimum 193-nm ARC for manufacturers to use during resist development and for the production of semiconductor devices. Light absorbing chromaphore (193 nm) will be chemically-attached to three different polymer hosts. The host polymers have been selected for high aliphatic content and the expectation that they will exhibit improved oxygen-plasma etch rates. To assure insolubility in photoresist solvents, the dye-attached polymers will be formulated into thermosetting systems (ARCs). The profile of 193 nm resist poly(methyl methacrylate) (PMMA) at optimum exposure and dose will be used to optimize ARC chemistry. Plasma etch rates of the cured 193 nm ARCs will be compared to ARC CD11. ARC stability and manufacturability will be determined. ARCs developed in Phase I would be further improved in Phase II and characterized with an amplified resist. A successful product will be useful to integrated circuit makers, offering promise for increased packing density on semiconductor substrates.