SBIR Phase I: Improved Dye-Attached Polymers for 193nm Anti-Reflective Coatings

这个小型企业创新研究第一阶段项目将开发改进的染料和染料附着聚合物，用于193 nm减反射涂层(ARC)。最近修订的国家半导体技术路线图要求最早在2000-2001年间引入193 nm光学光刻，最初的目标是0.15微米的分辨率。由于在该波长的高衬底反射率，在193 nm抗蚀剂下将有一定的ARC需求。目前的193 nm电弧对光致抗蚀剂的等离子体刻蚀选择性很差，导致了制作过程中的刻蚀偏置问题。蚀刻速率问题是由于ArC的染料附着型聚合物组分的芳香族碳环含量高和杂原子含量低所致。在第一阶段，将从富含负电性杂原子(如氧和氮)的新型染料附着型聚合物制备193 nm原型弧光，以提高蚀刻选择性。所产生的弧光将被仔细地表征，包括固化膜的光密度、等离子体蚀刻速率和光刻性能。该NSF计划(第一阶段和第二阶段)的目标是开发至少一种杰出的193 nm ARC，满足所有行业要求。将在第二阶段开发的ARC产品将通过光学光刻实现以低于0.15微米的设计规则运行的集成电路的高产量生产，从而满足关键的制造需求。

This Small Business Innovation Research Phase I project will develop improved dyes and dye-attached polymers for use in 193nm anti-reflective coatings (ARCs). The recently revised National Technology Roadmap for Semiconductors calls for the introduction of 193nm optical lithography as early as 2000-2001, with the initial goal being 0.15-micron resolution. Due to high substrate reflectivity at this wavelength, there will be a definite need for an ARC underneath the 193nm resist. Present generation 193nm ARCs exhibit poor plasma etch selectivity to photoresists leading to etch bias problems during fabrication. The etch rate problems result from the high aromatic carbocyclic ring content and low heteroatom content of the dye-attached polymer component of the ARC.In Phase I, prototype 193nm ARCs will be prepared from new dye-attached polymers that are enriched with electronegative heteroatoms, e.g., oxygen and nitrogen, to enhance etch selectivity. The resulting ARCs will be carefully characterized, including cured film optical density, plasma etch rate, and lithographic performance. The objective of this NSF program (Phases I and II) is to develop at least one outstanding 193nm ARC meeting all industry requirements. The ARC products to be developed in Phase II will fulfill a critical manufacturing need by enabling high yield production of integrated circuits operating at sub-0.15 micron design rules by optical lithography.