SBIR Phase I: Improved Dye-Attached Polymers for 193nm Anti-Reflective Coatings

这个小型企业创新研究第一阶段项目将开发用于193纳米抗反射涂层（ARC）的改进染料和染料附着聚合物。 最近修订的国家半导体技术路线图要求最早在2000-2001年引入193纳米光学光刻技术，最初的目标是0.15微米分辨率。 由于在该波长下的高衬底反射率，在193 nm抗蚀剂下面将明确需要ARC。 目前的193纳米ARC表现出较差的等离子体蚀刻选择性，导致在制造过程中的蚀刻偏置问题的光致抗蚀剂。 蚀刻速率问题是由ARC的染料附着聚合物组分的高芳族碳环含量和低杂原子含量引起的。在第一阶段，原型193 nm ARC将由富含电负性杂原子的新染料附着聚合物制备，例如，氧和氮，以增强蚀刻选择性。 将仔细表征所得ARC，包括固化膜光密度、等离子体蚀刻速率和光刻性能。 该NSF计划（第一阶段和第二阶段）的目标是开发至少一种优秀的193 nm ARC，满足所有行业要求。 ARC产品将在第二阶段开发，将满足关键的制造需求，使高产量生产的集成电路工作在亚0.15微米的设计规则，光学光刻。

This Small Business Innovation Research Phase I project will develop improved dyes and dye-attached polymers for use in 193nm anti-reflective coatings (ARCs). The recently revised National Technology Roadmap for Semiconductors calls for the introduction of 193nm optical lithography as early as 2000-2001, with the initial goal being 0.15-micron resolution. Due to high substrate reflectivity at this wavelength, there will be a definite need for an ARC underneath the 193nm resist. Present generation 193nm ARCs exhibit poor plasma etch selectivity to photoresists leading to etch bias problems during fabrication. The etch rate problems result from the high aromatic carbocyclic ring content and low heteroatom content of the dye-attached polymer component of the ARC.In Phase I, prototype 193nm ARCs will be prepared from new dye-attached polymers that are enriched with electronegative heteroatoms, e.g., oxygen and nitrogen, to enhance etch selectivity. The resulting ARCs will be carefully characterized, including cured film optical density, plasma etch rate, and lithographic performance. The objective of this NSF program (Phases I and II) is to develop at least one outstanding 193nm ARC meeting all industry requirements. The ARC products to be developed in Phase II will fulfill a critical manufacturing need by enabling high yield production of integrated circuits operating at sub-0.15 micron design rules by optical lithography.