Spatially Resolved Electronic Spectroscopy of Semiconductor Heterostructures

9615647 Feenstra该项目解决了原子几何形状和II-VI族和III族氮化物材料的电子能带结构的基础研究问题，这些材料被配置为与GaAs的异质结构。该方法利用详细的扫描隧道显微镜（STM）测量沿着与计算机模拟模型应变，应变弛豫，和电子能带结构。 通过耦合应变和临界点的电子带，PI努力的相关性和解释的STM图像的几何配置和电子特性的能力，以区分合金成分和相邻异质结层的带偏移。%该项目解决了具有高技术相关性的材料科学主题领域的前沿研究问题。 该研究将在基础层面上为电子/光子器件和集成电路的重要方面提供基础材料科学知识。 此外，从研究中获得的基本知识和理解预计将通过提供基本理解和设计和生产改进材料和材料组合的基础，以一般方式提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9615647 Feenstra This project addresses fundamental research issues of atomic geometry and electronic band structure of II-VI and III-nitride materials configured as heterostructures with GaAs. The approach utilizes detailed scanning tunneling microscopy (STM) measurements along with computer simulation to model strain, strain relaxation, and electronic band structure. By coupling strain and critical points of the electronic bands, the PI strives for correlation and interpretation of STM images in terms of geometric configurations and electronic properties with the capability to differentiate between alloy constituents and band offsets of adjoining heterostructure layers. %%% The project addresses forefront research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***