Experimental Studies of Thin Film Magnetism

本项目利用材料合成的最新进展、先进的结构测定方法以及磁敏感光谱和显微技术，研究薄膜结构、表面和界面的电子和磁性能。主要的科学目标是在几个长度尺度上探索结构和磁性之间的关系，并探测超薄膜、界面和纳米结构的人工稳定相中的磁性现象。实验解决了当前理论关注的问题，包括二维标度普适性类和相关标度参数的概念。这与最近旨在更广泛地商业化磁阻随机存取存储器（MRAM）技术的举措有关%%%由于最近旨在更广泛地商业化磁阻随机存取存储器（MRAM）技术的举措，对薄膜结构，表面和界面的电子和磁性能的基本理解是当前的兴趣。该项目解决了当前理论关注的问题，并利用材料合成的新进展，新的结构确定方法，以及最先进的磁敏感技术来探测人工制造结构中的磁现象和相变。该计划旨在为当地的科学/技术基础设施和位于路易斯安那州巴吞鲁日的高级微结构中心（CAMD）做出重大贡献。＊＊＊

w:\awards\awards96\*.doc 9623494 Erskine This project investigates the electronic and magnetic properties of thin film structures, surfaces, and interfaces using recent progress in materials synthesis, advanced structure determination methods, and magnetically-sensitive spectroscopic and microscopic techniques. The principle scientific objectives are to explore the relationship between structure and magnetism on several length scales and to probe magnetic phenomenon in artificially-stabilized phases of ultra-thin films, interfaces, and nanostructures. The experiments address issues of current theoretical interest including the notion of 2-dimensional scaling universality classes and related scaling parameters. It is relevant to recent initiatives aimed at a broader commercialization of Magneto-resistance Random Access Memory (MRAM) technology %%% The fundamental understanding of the electronic and magnetic properties of thin film structures, surfaces, and interfaces is of current interest due to the recent initiatives aimed at a broader commercialization of Magneto-resistance Random Access Memory (MRAM) technology. The project addresses issues of current theoretical interest and exploits new advances in materials synthesis, novel structural determination methods, and state-of- the-art magnetically sensitive techniques to probe magnetic phenomena and phase transitions in artificially produced structures. The program is aimed at making major contributions to the local scientific/ technological infrastructure and to the Center for Advanced Microstructures (CAMD) at Baton Rouge, Louisiana. ***