Micro-Mechanics Associated with Interconnects in Integrated Microelectronics

本项目旨在研究影响集成电子器件可靠性的电迁移、空化和界面脱黏等小尺度电子互连损伤过程。这些是高度局域化的现象，受温度（来自焦耳加热）和应力的影响。长度尺度远小于标准力学实验，因此需要新的实验技术。所提出的测量是基于硅的拉曼线和蓝宝石的r线荧光作为温度和应力的函数的位移和增宽。通过用精细聚焦的激光激发光谱，可以测量局部温度和应力。一种新的细观力学试验也将被用来测量界面的断裂抗力。* * *

9625796 Clarke This project is to examine the small scale electronic interconnect damage processes of electromigration voiding and interfacial decohesion which affect the reliability of integrated electronics. These are highly localized phenomena which are affected by temperature (from Joule heating) and stresses. The length scales are much smaller than those of standard mechanics experiments and therefore new experimental techniques are required. The proposed measurements are based on the shift and broadening of both the Raman lines of silicon and the R-line fluorescence of sapphire as a function of temperature and stress. By exciting the spectra with a finely focussed laser the local temperature and stress can be measured. A novel micromechanics test will also be used to measure fracture resistance of interfaces. ***