SBIR Phase I: High Pressure Metalorganic Chemical Vapor Deposition Growth of GaN and InGaN

这个小型企业创新研究一期项目将开发一种创新的高压金属有机化学气相沉积（MOCVD）反应室，以改善iii族氮化物的生长。在高于一个大气压的压力下生长将提高氨的裂解效率，限制材料的解吸，降低氮空位的密度，并通过允许更高的温度生长而获得更好的晶体质量。第一阶段将展示使用高压MOCVD反应室生长GaN，操作压力高达10个大气压。该腔室将采用垂直反流设计，以尽量减少对流。Nichia的第一个GaN激光二极管的MOCVD生长使用了一种与生长流正交的“推”流模拟高压的配置。在Spire，高压MOCVD已成功用于InP生长，使用的磷化氢比通常所需的要少得多。事实上，具有镜面和良好晶体质量的InP已经在三种气氛下沉积，V:III比为1:1，这是成功生长InP的最低比例。第二阶段将开发GaN、InGaN和AlGaN器件结构的生长参数。工艺优化将包括在载气中使用氮气，通过降低导热性来更好地将热量限制在晶圆表面。氮化镓的市场潜力是巨大的，特别是在光存储（蓝色激光器和led）和高温电子领域。由这种材料系统制成的产品已经有很大的需求。如果成功，高压MOCVD可能是GaN生长的首选工艺。Spire将为设备制造商提供高压反应器，而我们将利用这项技术扩展我们的光电子外延服务业务，以包括波长较短的设备结构。＊＊＊

*** ABSTRACT 9661323 Vernon This Small Business Innovative Research Phase I project will develop an innovative, high-pressure metalorganic chemical vapor deposition (MOCVD) reaction chamber for improved growth of Group-III nitrides. Growth at pressures above one atmosphere will increase cracking efficiency of ammonia, limit material desorption, lower the density of nitrogen vacancies, and lead to better crystal quality by permitting higher temperature growth. Phase I will demonstrate growth of GaN using a high-pressure MOCVD reaction chamber, operating up to ten-atmospheres pressure. The chamber will be a vertical, inverted-flow design to minimize convection. MOCVD growth of the first GaN laser diode at Nichia used a configuration which simulates high pressure with a "push" flow orthogonal to the growth stream. At Spire, high-pressure MOCVD has been successfully employed for InP growth using substantially less phosphine than normally required. In fact, InP with specular surfaces and good crystal quality has been deposited at three atmospheres with a V:III ratio of 1:1, the lowest ratio ever reported for the successful growth of InP. Phase II will develop growth parameters for GaN, InGaN, and AlGaN device structures. Process optimization will include use of nitrogen in the carrier gas to better confine heat to the wafer surface by reducing thermal conductivity. The market potential for GaN is tremendous, especially in optical storage (blue lasers and LEDs) and high-temperature electronics. Products made from this material system are already in large demand. If successful, high-pressure MOCVD may be the process of choice for GaN growth. Spire will offer high-pressure reactors to device manufacturers, while we use this technology to expand our optoelectronics epitaxial service business to include structures for shorter-wavelength devices. ***