SBIR Phase I: GaAsNSb - New Low-bandgap Material Lattice-matched to GaAs

这个小企业创新研究第一阶段项目将开发一种新材料GaAsNSb，该材料与GaAs晶格匹配，带隙低至1ev或更小。在建立金属有机化学气相沉积生长后，我们将重点研究将这种材料用作异质结双极晶体管（HBT）的基材层。这种低带隙基片将允许低电压运行，而晶格匹配将允许无应变运行，从而实现高可靠性和易于单片集成。低带隙GaAsNSb的另一个重要用途是用于长波长（1300nm）激光二极管。含3%氮、8%锑的GaAsNSb与GaAs晶格完全匹配，带隙应为1 eV；为一个HBT。然后，高带隙发射极可以是GaAs，从而消除了通常与AlGaAs或GaInP相关的问题，这是GaAs HBTs上典型的发射极材料。第一阶段将专注于GaAsNSb的生长、掺杂和表征，包括形成和测试模拟HBT基极-发射极结的GaAs-GaAsNSb二极管。对于这种以前未开发的材料，生长和制造完整的HBT结构超出了第一阶段的范围。由于该工艺是基于gaas的，因此与我们现有的HBT技术完全兼容。第二阶段将包括优化GaAsNSb生长和掺杂控制，GaAs-GaAsNSb异质结的生长，优化HBT设计，以及生长、制造和测试HBT器件。还可以探索GaAsNSb在光电应用中的应用。这项研究将产生一种用于蜂窝电话的新型低压异质结双极晶体管。与现有的基于gaas的设备相比，这种hbt将具有更高的可靠性和效率。在这里开发的低带隙、晶格匹配材料也将适用于长波激光器和其他光学器件。

This Small Business Innovation Research Phase I project will develop growth of a new material, GaAsNSb, that is lattice-matched to GaAs and has a bandgap as low as 1 eV or smaller. After establishment of growth by metalorganic chemical vapor deposition, we will focus on using this material as the base layer in a heterojunction bipolar transistor (HBT). This low-bandgap base will permit low-voltage operation, while the lattice-match will allow strain-free operation for high reliability and ease of monolithic integration. Another important use of low-bandgap GaAsNSb will be for long-wavelength (1300 nm) laser diodes. GaAsNSb, with 3% nitrogen, 8% antimony, is exactly lattice-matched to GaAs and should have a bandgap of 1 eV; for an HBT. The high-bandgap emitter can then be GaAs, thus eliminating the problems often associated with AlGaAs or GaInP, which are typical emitter materials on GaAs HBTs. Phase I will concentrate on growing, doping, and characterizing GaAsNSb, including forming and testing GaAs-GaAsNSb diodes that simulate the base-emitter junction of an HBT. Growth and fabrication of complete HBT structures is beyond the scope of a Phase I for this previously unexplored material. Since this process is GaAs-based, it is totally compatible with our existing HBT technology. Phase II will include optimizing GaAsNSb growth and doping control, growth of GaAs-GaAsNSb heterojunctions, optimizing HBT design, and growing, fabricating, and testing HBT devices. Use of GaAsNSb in optoelectronic applications may also be explored.The research will result in a new low-voltage heterojunction bipolar transistor for use in cellular telephones. Such HBTs will have improved reliability and efficiency over existing GaAs-based devices. The low-bandgap, lattice-matched material to be developed here also will have applicability to long-wavelength lasers and other optical devices.