SBIR Phase I: GaAsNSb - New Low-bandgap Material Lattice-matched to GaAs

SBIR 第一阶段：GaAsNSb - 与 GaAs 晶格匹配的新型低带隙材料

• 批准号: 9960329
• 负责人: Stanley Vernon
• 金额: $ 9.99万
• 依托单位: Spire Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-01-01 至 2000-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9960329&HistoricalAwards=false
• 关键词: SBIR; Phase; GaAsNSb; New; Low

This Small Business Innovation Research Phase I project will develop growth of a new material, GaAsNSb, that is lattice-matched to GaAs and has a bandgap as low as 1 eV or smaller. After establishment of growth by metalorganic chemical vapor deposition, we will focus on using this material as the base layer in a heterojunction bipolar transistor (HBT). This low-bandgap base will permit low-voltage operation, while the lattice-match will allow strain-free operation for high reliability and ease of monolithic integration. Another important use of low-bandgap GaAsNSb will be for long-wavelength (1300 nm) laser diodes. GaAsNSb, with 3% nitrogen, 8% antimony, is exactly lattice-matched to GaAs and should have a bandgap of 1 eV; for an HBT. The high-bandgap emitter can then be GaAs, thus eliminating the problems often associated with AlGaAs or GaInP, which are typical emitter materials on GaAs HBTs. Phase I will concentrate on growing, doping, and characterizing GaAsNSb, including forming and testing GaAs-GaAsNSb diodes that simulate the base-emitter junction of an HBT. Growth and fabrication of complete HBT structures is beyond the scope of a Phase I for this previously unexplored material. Since this process is GaAs-based, it is totally compatible with our existing HBT technology. Phase II will include optimizing GaAsNSb growth and doping control, growth of GaAs-GaAsNSb heterojunctions, optimizing HBT design, and growing, fabricating, and testing HBT devices. Use of GaAsNSb in optoelectronic applications may also be explored.The research will result in a new low-voltage heterojunction bipolar transistor for use in cellular telephones. Such HBTs will have improved reliability and efficiency over existing GaAs-based devices. The low-bandgap, lattice-matched material to be developed here also will have applicability to long-wavelength lasers and other optical devices.

这个小型企业创新研究第一阶段项目将开发一种新材料 GaAsNSb 的生长，该材料与 GaAs 晶格匹配，带隙低至 1 eV 或更小。 在通过金属有机化学气相沉积建立生长后，我们将专注于使用这种材料作为异质结双极晶体管（HBT）的基础层。这种低带隙基极将允许低电压运行，而晶格匹配将允许无应变运行，从而实现高可靠性和易于单片集成。 低带隙 GaAsNSb 的另一个重要用途是用于长波长（1300 nm）激光二极管。 GaAsNSb，含有 3% 氮、8% 锑，与 GaAs 完全晶格匹配，带隙应为 1 eV；对于HBT。 高带隙发射极可以是 GaAs，从而消除了通常与 AlGaAs 或 GaInP（GaAs HBT 上的典型发射极材料）相关的问题。 第一阶段将集中于 GaAsNSb 的生长、掺杂和表征，包括形成和测试模拟 HBT 基极-发射极结的 GaAs-GaAsNSb 二极管。 对于这种先前未开发的材料，完整 HBT 结构的生长和制造超出了第一阶段的范围。 由于该工艺基于 GaAs，因此与我们现有的 HBT 技术完全兼容。 第二阶段将包括优化 GaAsNSb 生长和掺杂控制、GaAs-GaAsNSb 异质结的生长、优化 HBT 设计以及生长、制造和测试 HBT 器件。 还可以探索 GaAsNSb 在光电应用中的使用。这项研究将产生一种用于蜂窝电话的新型低压异质结双极晶体管。 与现有的基于砷化镓的器件相比，此类 HBT 的可靠性和效率都得到了提高。这里要开发的低带隙、晶格匹配材料也将适用于长波长激光器和其他光学器件。