ERA NanoSci - Interfacing Functional Nanocomposites for Non-Volatile Memory Devices

对器件小型化的持续需求构成了当前制造技术无法解决的技术和经济障碍。该提议旨在开发一种简单的技术，用于基于调制嵌段共聚物/纳米颗粒（BCP/NP）组装方法制造用于非易失性存储器设备的交叉杆电极阵列，其中在电场下控制NP和BCP域之间的界面相互作用的能力对于获得所需结构至关重要。通过实验化学家，理论家和电气工程师之间的紧密合作，我们打算解开BCP/NP组件在定向电场影响下的基本行为，然后利用所形成的结构来创建超高密度，多组件存储设备。

The continuous demand for device miniaturization poses technological and economic barriers that cannot be answered by current fabrication techniques. This proposal is aimed at the development of a simple technique for the fabrication of crossbar electrode arrays for non-volatile memory devices based on a modulated block copolymer/nanoparticle (BCP/NP) assembly approach, where the ability to control the interfacial interactions between the NPs and the BCP domains under an electric field is crucial for obtaining the desired structure. Through a tight collaboration between experimental chemists, theoreticians, and an electrical engineer we intend to unravel the fundamental behavior of BCP/NP assembly under the influence of a directing electric field, and then to utilize the structures formed for the creation of an ultrahigh-density, multi-component memory device.