NSF-CGP Fellowship: Growth and Characterization of InGaN Active Layers for Improved Blue-Emitting Laser Diodes

Hacke 9802321该奖项支持Peter L.博士为期24个月的研究访问。Hacke，目前是日本理化研究所（RIKEN）博士后研究员，与富士通实验室电子器件和材料实验室的Toshiyuki Tanahashi博士合作， 厚木，日本。 他们的研究涉及InGaN有源层的生长和表征，用于改进的蓝光激光二极管。 这些二极管的表征对于找到限制商业仪器中这些器件的操作、性能和寿命的问题的解决方案至关重要。 这项研究将在富士通实验室进行，该实验室目前有一个连贯的小组致力于与蓝光激光二极管操作相关的问题。 富士通是全球少数几家成功开发氮化物蓝色激光二极管的公司之一。 Hacke博士之前在日本工作期间曾访问过富士通实验室，并了解该研究小组的研究兴趣和能力。 在他的职业生涯中，Hacke博士一直从事基础研究。 富士通实验室的拟议研究将为产品开发提供经验。 该项目得到了国家科学基金会和日本基金会全球伙伴关系中心之间的科学奖学金计划的支持。

Hacke 9802321 This award supports a 24-month research visit by Dr. Peter L. Hacke, currently a Postdoctoral Fellow, Institute of Physical and Chemical Research (RIKEN), Japan, for collaboration with Dr. Toshiyuki Tanahashi, Electron Devices and Materials Laboratories, Fujitsu Laboratories, Ltd., Atsugi, Japan. Their research is concerned with the growth and characterization of InGaN active layers for improved blue-emitting laser diodes. Characterization of these diodes is essential to finding solutions to problems which limit the operation, performance, and lifetime of these devices in commercial instruments. The research will be conducted at Fujitsu Laboratories which has a coherent group presently working on issues related to the operation of blue light laser diodes. Fujitsu is one of only a few companies worldwide reporting successful operation of a nitride-based blue laser diode. During his previous work in Japan, Dr. Hacke has visited the Fujitsu Laboratories and is aware of the research interests and capabilities of this research group. To this point in his career, Dr. Hacke has been engaged in fundamental research. The proposed research at Fujitsu Laboratories will provide experience in product development. This project is supported under the Science Fellowship Program between the National Science Foundation and the Japan Foundation Center for Global Partnership.