Nanoscale Controlled SrRu03-Insulator-SrRu03 Epitaxial Ferromagnetic Heterostructures for the Study of Spin Polarized Tunneling

9802444 Eom这个大学/行业合作的GOALI提案旨在更好地理解氧化铁磁-绝缘体-铁磁三层结，界面效应和（Sr,Ca）RuO3的电子结构中的势垒现象/物理。杜克大学的严昌范教授正在与IBM托马斯·j·沃森研究中心的乔纳森·z·孙进行合作。该方法包括研究和控制单个层的生长机制和畴结构，以及研究结性能，以获得可靠的低缺陷密度界面和绝缘层。该项目还研究了跨越势垒区域的自旋相关输运机制，结磁电阻的偏置和温度依赖性，以及输运行为、势垒合成/加工条件和化学成分之间的关系。该项目由DMR电子材料计划和MPS OMA（多学科活动办公室）共同支持。该项目涉及具有高技术相关性的材料科学主题领域的基础研究问题。该研究将为电子/磁性器件的重要方面提供基础材料科学知识。现在有了实验工具，可以在原子水平上观察基本的表面和界面过程，如果更好地了解这些过程，就可以在基础和技术领域取得进展。从研究中获得的基本知识和理解预计将有助于提高先进器件和电路的性能和稳定性，为设计和生产改进的材料和材料组合提供基本的理解和基础。该计划的一个重要特点是通过在基础和技术上重要的领域培训学生来整合研究和教育，并通过项目的GOALI方面为学生提供体验学术和工业研究方法和环境的重要机会。＊＊＊

9802444 Eom This University/Industry collaborative GOALI proposal aims for greater understanding of barrier phenomena/physics in oxide ferromagnetic-insulator-ferromagnetic trilayer junctions, interfacial effects, and the electronic structure of (Sr,Ca)RuO3. Professor Chang-Beom Eom at Duke University is collaborating with Jonathan Z. Sun at the IBM Thomas J. Watson Research Center. The approach involves the study and control of the growth mechanism and domain structures of individual layers, and the investigation of junction properties to obtain reliable and low defect density interfaces and insulating layers. The project also addresses the mechanism for spin-dependent transport across the barrier region, the bias and temperature dependence of junction magnetoresistance, and the relationships between transport behavior, barrier synthesis/processing conditions, and chemical compositions. The project is co-supported by the DMR Electronic Materials Program and the MPS OMA(Office of Multidisciplinary Activities). %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/magnetic devices. Experimental tools are now available to allow atomic level observation of basic surface and interface processes which when better understood will allow advances in both fundamental and technological arenas. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area, and in providing an impor tant opportunity through the GOALI aspect of the project for students to experience both academic and industrial research approaches and environments. ***