Submicron Scale Studies of Optical Anisotropy in Thin Films

9802634 Hsu本项目旨在使用扫描光学显微镜（NSOM）表征几种材料系统的亚微米不均匀性，包括异质外延量子点，Si3N4膜，GeSi缓冲层，SrRuO3， YBCO和共聚物薄膜。该项目的目标是详细了解缺陷和非均匀应变对电（输运）和光学各向异性的影响，潜在地提供有价值的信息，以帮助定制特定功能/应用的材料特性。该方法是使用NSOM以亚波长分辨率绘制光学各向异性，以确定应变和缺陷在产生这些各向异性中的作用，然后将这些应变与生长/合成参数相关联，以了解其起源以及如何实现所需的应变水平和模式。该项目由朗讯科技公司（GeSi）、康奈尔大学（Si3N4膜）、杜克大学（YBCO薄膜）以及弗吉尼亚大学合作完成。该项目涉及具有高潜在技术相关性的材料科学主题领域的基础研究问题。该研究将为电子/光子材料的新领域提供基础的材料科学知识。现在有了实验工具，可以对基本的表面过程和相关现象进行光学观察，如果更好地理解这些过程和现象，就可以促进基础科学和技术的进步。从研究中获得的基本知识和理解预计将有助于提高先进器件和电路的性能和稳定性，为设计和生产改进的材料和材料组合提供基本的理解和基础。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊

9802634 Hsu This project aims to use scanning optical microscopy (NSOM) for the characterization of submicron inhomogeneities in several materials systems, including heteroepitaxial quantum dots, Si3N4 membranes, GeSi buffer layers, SrRuO3, YBCO, and copolymer films. The goal of the project is to gain detailed understanding of the effect of defects and inhomogeneous strain on electrical(transport) and optical anisotropies, potentially providing valuable information to aid in the tailoring of materials properties for particular functions/applications. The approach is to map optical anisotropies with sub wavelength resolution using NSOM to determine the role of strain and defects in producing these anisotropies, and then to correlate these strains with growth/synthesis parameters for development of understanding of their origins and how to achieve desired strain levels and patterns. The program is collaborative involving Lucent Technologies(GeSi), Cornell University(Si3N4 membranes), and Duke University (YBCO films), along with the University of Virginia. %%% The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic materials. Experimental tools are now available to allow optical observation of elementary surface processes and related phenomena which when better understood allow advances in fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***