U.S.-Germany Cooperative Research: Device Simulator for Heterojunction Bipolar Transistors

9809935Liou该奖项支持PI Juin Liou和来自中佛罗里达大学的两名研究生与德国伊尔梅瑙工业大学电气与信息工程系的Frank Schwierz合作。研究的重点是一个新的和有前途的半导体器件称为异质结双极晶体管（HBT）的建模，仿真，制造和可靠性。新型晶体管具有非常高的开关速度和卓越的电流处理能力，非常适合用于高频，高速，大电流应用，如微波范围内的频率混频器和功率放大器。美国集团在稳定和瞬态运行下HBT的分析建模方面拥有丰富的经验，德国集团专门开发用于预测不同情况下HBT行为的模拟器。结合的专业知识将导致HBT行为和改进HBT设备的知识显著进步。

9809935LiouThis award supports the PI, Juin Liou, and two graduate students from the University of Central Florida in a collaboration with Frank Schwierz of the Department of Electrical and Information Engineering at the Technical University of Ilmenau, Germany. The research focus is on the modeling, simulation, fabrication, and reliability of a new and promising semiconductor device called the heterojunction bipolar transistor (HBT). The new transistor has a very high switching speed and superior current-handling abilities, and is ideal for use in high-frequency, high-speed, high-current applications such as frequency mixers and power amplifiers operating in the microwave range. The U.S. group has extensive experience in the analytical modeling of HBTs under steady and transient operations, and the German group specializes in the development of simulators for predicting HBT behavior under varying circumstances. The combined expertise will result in a significant advancement in knowledge of HBT behavior and improved HBT devices.