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U.S.-Japan Cooperative Science: Flatness Metrology of Large Wafers with Nanometer Accuracy

U.S.-Japan Cooperative Science: Flatness Metrology of Large Wafers with Nanometer Accuracy
美日合作科学:纳米级精度的大晶圆平面度测量
批准号:
9910063
负责人:
Peisen Huang
金额:
$2.93万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-06-01 至 2004-08-31

项目摘要

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中文摘要
翻译
9910063该奖项支持纽约州立大学(SUNY)的黄培森教授、石溪大学的黄培森教授和日本东北大学的高卫教授之间为期三年的合作研究项目。研究人员将进行一项纳米精度的大晶圆平面度计量研究。对更小的特征和更大的晶圆尺寸的不断推动使得对晶圆平坦度的要求越来越严格。这一需求不能通过简单地扩展当前现有的技术来满足。范式的转变是必要的,需要开发新的概念。这项研究旨在开发一种全新的方法,即绝对平面度测量,用于下一代晶圆和器件制造。利用这种方法,平面度测量结果不受扫描运动和方法的误差影响,平面度测量结果不受扫描运动引起的误差,因此与传统方法相比,平面度测量结果的精度将大大提高。该项目汇集了两个拥有互补专业知识和研究能力的实验室的努力。这种方法的成功使用将最终消除使用晶圆母版定期校准计量系统的需要,从而降低系统维护成本。这项研究的影响并不局限于半导体行业。同样的技术也可以应用于液晶面板的计量、先进的光学反射镜,如X射线同步加速器反射镜、硬盘基板等,以显著提高其测量精度。这项研究通过研究生的参与促进了国际人力资源的发展。通过思想和技术的交流,这个项目将扩大我们的基础知识基础,促进国际理解与合作。研究人员计划在技术会议上和他们的网站(http://www.precision.eng.sunysb.edu).)上公布研究结果
英文摘要
9910063HuangThis award supports a three year collaborative research project between Professor Peisen Huang of the State University of New York (SUNY), Stony Brook and Professor Wei Gao of Tohoku University in Japan. The researchers will be undertaking a study of the flatness metrology of large wafers with nanometer accuracy. The continuous drive toward smaller features and larger wafer sizes is making the requirements on wafer flatness increasingly stringent. This demand cannot be met by simply extending the currently existing technologies. A paradigm shift is necessary and new concepts need to be developed. This research is aimed at developing a completely new method, namely absolute flatness metrology, for next generation wafer and device manufacturing. With this method, the flatness measurement results are free from errors caused by the scanning motion and method, the flatness measurement results are free from errors caused by the scanning motion and are thus expected to be significantly more accurate compared to those achievable by the traditional methods. The project brings together the efforts of two laboratories that have complementary expertise and research capabilities. The successful use of this method will eventually eliminate the need for periodical calibration of the metrology system with a wafer master, which reduces system maintenance costs. The impact of this research is not limited to the semiconductor industry. The same technology can also be applied to the metrology of liquid crystal panels, advanced optical mirrors such as x-ray synchrotron mirrors, hard disk substrates, etc. to significantly improve their measurement accuracy. This research advances international human resources through the participation of graduate students. Through the exchange of ideas and technology, this project will broaden our base of basic knowledge and promote international understanding and cooperation. The researchers plan to publish results of the research at technical meetings and on their web site (http://www.precision.eng.sunysb.edu).
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SGER: High-Resolution 3-D Surface Topography Measurement Using a Scanning Electron Microscope
  • 批准号:
    0800212
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2008
  • 负责人:
    Peisen Huang
  • 依托单位:
High-Speed, High-Resolution 3-D Machine Vision for Automated Inspection of Highway Pavement Surfaces
  • 批准号:
    9900337
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $23.23万
  • 财政年份:
    1999
  • 负责人:
    Peisen Huang
  • 依托单位:
Full-Field Three-Dimensional Surface Contouring for Industrial Inspection and Reverse Engineering
  • 批准号:
    9713895
  • 项目类别:
    Standard Grant
  • 资助金额:
    $24.08万
  • 财政年份:
    1997
  • 负责人:
    Peisen Huang
  • 依托单位:
海外基金