GOALI: Potential of the C-Face of SiC in Device Electronics

对于涉及金属氧化物半导体(MOS)器件的开关技术，碳化硅是一种很有前途的替代硅的候选材料，因为它可以被热氧化形成绝缘的二氧化硅层，并且它与替代绝缘体AlN的晶格匹配很好。大多数SIC研究表明，基于C-Face(000-1)的器件不如在SiFace(0001)上生产的器件，但很少有研究解决改进C-Face的方法。PI将对由碳化硅的C面和硅面形成的MOS电容器进行电学测量，他们将调查各种氧化和后氧化处理，以探讨改进C面MOS器件的可能性。认识到C面比Si面更容易石墨化的趋势，将为他们寻找优化碳面器件结构和电气质量的条件提供一个起点。拟议的工作有可能在几个方面推动高功率器件技术的发展。最终，这项工作应该会产生一种配方，使C面MOS结构摆脱困扰硅面结构的困难。在这个过程中，PI可能会改进硅面器件；因此，它们为各种同时利用硅面和C面的碳化硅MOS器件开辟了道路。在更根本的层面上，提出的一系列系统的对照实验应该揭示出对这两种面孔之间的差异的更好理解。

9978561ZvanutFor switching technology involving metal-oxide-semiconductor (MOS) devices, SiC is a promising candidate to replace Si because it may be thermally oxidized to form the insulating SiO2 layer, and it lattice matches well with an alternative insulator, A1N. Most SiC studies show that devices built on the C-face (000-1) are inferior to those produced on the Siface (0001), but there are few investigations that address methods of improving the C-face. The PI's will conduct electrical measurements on MOS capacitors formed from the C-face and Siface of SiC, and they will investigate a variety of oxidation and post-oxidation treatments to look into the possibility of improving C-face MOS devices. Recognizing the tendency for the C-face to graphitize more readily than the Si-face will provide a starting point in their search to find conditions which optimize the structural and electrical quality of carbon-face devices.The proposed work has potential for advancing high power device technology in several ways. Ultimately, the work should produce a recipe for making C-face MOS structures free from the difficulties which plague Si-face structures. In the process, the PI's likely could improve Si-face devices; thus, they open the way to a variety of SiC-based MOS devices utilizing both the Si- and C-faces. On a more fundamental level, the systematic series of controlled experiments proposed should reveal a better understanding of the differences between the two faces.***