SBIR Phase II: High Performance Vertical Heterojunction Bipolar Transistor (HBT) on SiC Using Novel III-Nitride Technology

该小型企业创新研究第二阶段项目旨在开发一种基于碳化硅(SiCc)上生长的III-氮化物异质结的新型垂直几何结构异质结双极晶体管(HBT)。高线性度、高功率微波放大器对高功率异质结双极晶体管的需求很大。该方案的创新之处在于通过使用高导电性的新型氮化物缓冲器和基极结构来增强p型横向导电性并改善基极的垂直传输特性，从而在碳化硅上展示了宽带隙异质结晶体管。该垂直异质结异质结晶体管是新一代卫星和无线通信网络基站的关键部件。另一个应用领域是用于大功率电子产品的直流开关元件。

This Small Business Innovative Research Phase II Project is aimed to develop a novel vertical geometry Heterojunction Bipolar Transistor (HBT) based on III-nitride heterostructures grown on SiC (silicon carbide). There is a strong need for high power HBTs for highly linear, high power microwave amplifiers. The innovation of this proposal is to demonstrate WBG (wide band gap) HBTs on SiC that will take advantage of the vertical geometry, and high thermal conductivity of SiC through the use of highly conductive novel nitride buffer and base structure to enhance p-type lateral conductivity with improved vertical transport properties through the base.The proposed vertical WBG HBT device is a critical component for a new generation of satellite and base stations for wireless communication networks. Another application area is DC switch components for high power electronics.