Epitaxial Electrodeposition of Metal Oxide Semiconductors

在这个项目中，半导体金属氧化物的外延薄膜将从溶液前驱体电沉积到单晶衬底上。重点将放在晶格失配较高的外延系统上，以及合成无法用传统热方法加工的具有重要技术意义的半导体金属氧化物上。外延薄膜通常通过气相沉积方法，如化学气相沉积，在高温下沉积到单晶衬底上，其晶格参数应尽可能接近于薄膜的晶格参数。该项目打破了这些传统，使用了一种简单的低温工艺，即电沉积，以生产具有大晶格失配的外延系统。该研究项目将包括三个阶段：(I)金属氧化物半导体的外延电沉积和表征，(Ii)外延电沉积的机理研究，以及(Iii)外延电沉积从热力学到动力学控制的研究。第一阶段的研究目标将是建立半导体金属氧化物外延电沉积的普遍性，并确定外延薄膜相对于单晶衬底的面外和面内取向。第二阶段的工作将集中在外延电沉积的机理上。这项工作的最后阶段将探索从热力学到取向动力学控制的转变。在这个项目中，氧化物材料的外延薄膜将使用一种低温工艺-电沉积在单晶衬底上沉积。这种低温技术允许生长标准高温技术无法获得的薄膜。薄膜材料在信息技术和电信等高科技应用中非常重要。

0071365SwitzerIn this project, epitaxial films of semiconducting metal oxides will be electrodeposited from solution precursors onto single-crystal substrates. The emphasis will be on epitaxial systems with high lattice mismatch, and on the synthesis of technologically-important semiconducting metal oxides that cannot by processed by traditional thermal methods. Epitaxial films are usually deposited by vapor deposition methods, such as chemical vapor deposition, at elevated temperatures onto a single crystal substrate chosen to have a lattice parameter as close as possible to that of the film. The project breaks with these traditions by using a simple low-temperature process, electrodeposition, to produce epitaxial systems with large lattice mismatch. The research project will consist of three phases: (i) Epitaxial electrodeposition and characterization of metal oxide semiconductors, (ii) Mechanistic studies of epitaxial electrodeposition, and (iii) Study of the transition from thermodynamic to kinetic control in epitaxial electrodeposition. The goals of the first phase of the research will be to establish the generality of epitaxial electrodeposition of semiconducting metal oxides and to determine both the out-of-plane and in-plane orientation of the epitaxial films relative to the single-crystal substrates. The second phase of the work will focus on the mechanism of epitaxial electrodeposition. The final phase of the work will explore the transition from thermodynamic to kinetic control of orientation. In this project, epitaxial films of oxide materials will be deposited onto single-crystal substrates using a low temperature process, electrodeposition. This low temperature technique allows the growth of films that cannot be obtained by the standard high-temperature techniques. Thin film materials are important in high tech applications such as information technology and telecommunications.