Optical and Far Infrared Studies of Semiconductor Heterostructures
Optical and Far Infrared Studies of Semiconductor Heterostructures
批准号:
0072897
负责人:
Margaret Dobrowolska
金额:
$31.5万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-08-15 至 2003-07-31
中文摘要
该项目由三个部分组成,所有部分都涉及半导体异质结构,其性质几乎完全由电子自旋决定。(1)在CdSe/ZnSe量子点体系中引入Mn,制备并进行自组装磁性半导体量子点(QDs)的光学研究。这项工作将集中在对自组装过程的理解和控制上,重点是形貌、组成的均匀性和Mn掺入的控制。光学研究将集中于零维系统中的交换相互作用,量子点几何结构中磁性近邻数量减少的影响,以及确定此类系统中的自旋寿命(预期非常长)。(2)制作和执行铁磁半导体及其多层的光学研究。III-Mn-V合金中铁磁性的发现是一个重大突破,它提供了将巨大自旋相关效应集成到iii - v基电子学和光电子学中的可能性。将锰引入III-V晶格时形成的大密度缺陷的问题将通过一系列III-V基铁磁材料的MBE生长策略来解决。这些系统的光学测试将特别关注通过减少缺陷和优化p型掺杂来改善这些材料的光学质量。(3)将研究基于稀释磁性半导体(DMS)多层的bragg约束系统。这些系统提供了调谐(通过外加磁场)组成层材料之间的相对带对准的可能性。这种可调性可用于控制结构内电子和/或空穴的德布罗意波长,从而调节它们的布拉格局域化。由于在基于dms的系统中,Bragg定位的可调性是特定于自旋的,因此在该计划中开发的结构将作为自旋滤波器件的原型,可能在自旋电子学中找到重要的应用。这项研究将为纳米科学和自旋电子领域的研究生提供培训,从而满足美国在两个重要和快速发展的技术领域的人力需求。传统的半导体电子学完全基于电子电荷及其对外加电信号的响应。然而,电子还具有另一种特性:自旋。最近的实验表明,后一种特性具有一定的优势,这使得基于自旋的纳米结构作为下一代电子器件的候选者具有吸引力。尽管人们已经可以预见未来基于自旋的电子学(“自旋电子学”)在探测器系统、超高速开关和量子计算中的应用,但在这些设备成为现实之前,还需要解决许多基本问题。本研究涉及半导体异质结构的三个相互关联的领域,其性质几乎完全由电子自旋决定:自旋电子学材料的控制制造,这些材料的光学表征,以及有效识别彼此不同自旋态的技术的发展。这些任务的成功完成将对科学理解自旋电子学过程及其在实际技术设备中的应用做出重大贡献。本研究将由研究生和博士后研究员共同完成。他们将接受纳米科学和基于自旋的电子学领域的培训,为他们进入科技队伍做准备。***
英文摘要
The project consists of three parts, all of them involving semiconductor heterostructures whose properties are determined almost entirely by electron spin. (1) Fabricate, and carry out optical studies of self-assembled magnetic semiconductor quantum dots (QDs) achieved by introducing Mn into the CdSe/ZnSe QD system. This effort will focus on the understanding and control of the self-assembly process, with emphasis on the morphology, uniformity of composition, and control of Mn incorporation. Optical studies will concentrate on the exchange interaction in zero-dimensional systems, on the effect of a reduced number of magnetic nearest-neighbors in the QD geometry, and on determining the (expectedly very long) spin lifetimes in such systems. (2) Fabricate and perform optical studies of ferromagnetic semiconductors and their multilayers. The discovery of ferromagnetism in III-Mn-V alloys is a major breakthrough that holds out possibilities of integrating giant spin-related effects into III-V-based electronics and optoelectronics. The problem of the large density of defects that form when Mn is introduced into the III-V lattice will be addressed by a series of strategies for MBE growth of III-V based ferromagnetics. Optical tests of these systems will focus specifically on improving the optical quality of these materials via defect reduction and optimization of p-type doping. (3) Bragg-confining systems based on diluted magnetic semiconductor (DMS) multilayers will be investigated. These systems offer the possibility of tuning (via an applied magnetic field) the relative band alignment between the constituent layer materials. This tunability can be used for controlling the de Broglie wavelength of electrons and/or holes within the structure, and thus for tuning their Bragg localization. Since in DMS-based systems the tunability of Bragg localization is spin-specific, the structures developed in the program will serve as prototypes for spin-filtering devices that may find important application in spin-based electronics. This research will provide training for graduate students in areas of nanoscience and spin-based electronics, thus meeting U.S. manpower needs in two important and rapidly developing areas of technology.%%% Traditional semiconductor electronics is based entirely on the electron charge and its response to applied electric signals. The electron, however, is also characterized by another property: the spin. Recent experiments have demonstrated that this latter property holds out certain advantages which make spin-based nanostructures attractive as candidates for the next generation of electronic devices. Although one can already envision future applications of spin-based electronics ("spintronics") in detector systems, ultra-fast switches and quantum computing, many fundamental issues need to be resolved before such devices can become reality. This research deals with three inter-related areas involving semiconductor heterostructures whose properties are determined almost entirely by electron spin: Controlled fabrication of spintronics materials, optical characterization of these materials, and development of techniques for the effective identification of different spin states from one another. Successful completion of these tasks will be major contributions to the scientific understanding of spintronics processes and their incorporation in practical technological devices. This research will be performed with graduate students and postdoctoral research associates. They will receive training in areas of nanoscience and spin-based electronics in preparation for their entry into the scientific and technological workforce. ***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Electron Spin Effects in Semiconductor Nanostructures
-
批准号:1400432
-
项目类别:Standard Grant
-
资助金额:$47.33万
-
财政年份:2014
-
负责人:Margaret Dobrowolska
-
依托单位:
Electron Spin Effects in Semiconductor Nanostructures
-
批准号:1005851
-
项目类别:Continuing Grant
-
资助金额:$60.0万
-
财政年份:2010
-
负责人:Margaret Dobrowolska
-
依托单位:
Electron Spin Effects in Semiconductor Nanostructures
-
批准号:0603752
-
项目类别:Continuing Grant
-
资助金额:$48.0万
-
财政年份:2006
-
负责人:Margaret Dobrowolska
-
依托单位:
Electron Spin Effects in Semiconductor Nanostructures
-
批准号:0245227
-
项目类别:Continuing Grant
-
资助金额:$33.18万
-
财政年份:2003
-
负责人:Margaret Dobrowolska
-
依托单位:
Optical and Far Infrared Studies of Semiconductor Heterostructures
-
批准号:9705064
-
项目类别:Standard Grant
-
资助金额:$30.0万
-
财政年份:1997
-
负责人:Margaret Dobrowolska
-
依托单位:
Optical and Far Infrared Studies of Semiconductor Heterostructures
-
批准号:9208400
-
项目类别:Continuing Grant
-
资助金额:$47.0万
-
财政年份:1992
-
负责人:Margaret Dobrowolska
-
依托单位:
国内基金
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